Datasheet > BC847B-G

BC847B-G

更新时间： 2024-11-15 12:35:19

品牌	Logo	应用领域
上华 - COMCHIP		晶体晶体管
页数	文件大小	规格书
5页	156K
描述
Small Signal Transistor

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中文翻译

获取价格

数据手册

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BC847B-G 数据手册

Small Signal Transistor

BC846A-G Thru. BC848C-G (NPN)

RoHS Device

Features

-Power dissipation

PCM: 0.20W (@TA=25 C)

SOT-23

-Collector current

ICM: 0.1A

-Collector-base voltage

VCBO: BC846=80V

0.118(3.00)

0.110(2.80)

BC847=50V

BC848=30V

0.055(1.40)

0.047(1.20)

-Operating and storage junction temperature

range: TJ, TSTG= -65 to +150 ^OC

0.079(2.00)

0.071(1.80)

0.006(0.15)

0.003(0.08)

Mechanical data

-Case: SOT-23, molded plastic.

0.041(1.05)

0.035(0.90)

0.100(2.55)

0.089(2.25)

-Terminals: solderable per MIL-STD-750,

method 2026.

-Approx. weight: 0.008 grams

0.004(0.10) max

0.020(0.50)

0.012(0.30)

0.020(0.50)

0.012(0.30)

Circuit diagram

-1.BASE

-2.EMITTER

-3.COLLECTOR

Dimensions in inches and (millimeter)

Maximum Ratings (at Ta=25 ^OC unless otherwise noted)

Symbol

Parameter

Value

UNIT

BC846-G

BC847-G

BC848-G

Collector-Base Voltage

VCBO

BC846-G

BC847-G

BC848-G

Collector-Emitter Voltage

Emitter-Base Voltage

VCEO

VEBO

0.1

200

°C

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

150

Storage Temperature Range

TSTG

-65 to +150

°C

Company reserves the right to improve product design , functions and reliability without notice.

REV:B

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