BC847BLP4

更新时间： 2024-01-08 15:58:26

品牌	Logo	应用领域
美台 - DIODES		晶体晶体管
页数	文件大小	规格书
4页	115K
描述
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

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技术参数
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BC847BLP4 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	compliant
风险等级：	5.6	最大集电极电流 (IC)：	0.1 A
配置：	Single	最小直流电流增益 (hFE)：	200
最高工作温度：	150 °C	极性/信道类型：	NPN
最大功率耗散 (Abs)：	0.25 W	子类别：	Other Transistors
表面贴装：	YES	标称过渡频率 (fT)：	100 MHz
Base Number Matches：	1

BC847BLP4 数据手册

BC847BLP4

NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

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Features

Mechanical Data

•

Epitaxial Die Construction

Ultra-Small Leadless Surface Mount Package

Ultra Low Profile (0.4mm max)

Complementary PNP Type Available (BC857BLP4)

Lead Free By Design/RoHS Compliant (Note 1)

"Green" Device (Note 2)

•

Case: DFN1006H4-3

Case Material: Molded Plastic, "Green" Molding Compound. UL

Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020D

Terminal Connections Indicator: Collector Dot

•

Terminals: Finish ⎯ NiPdAu over Copper leadframe. Solderable

per MIL-STD-202, Method 208

•

Ordering Information: See Page 3

Marking Information: See Page 3

Weight: 0.0008 grams (approximate)

Top View

Bottom View

Internal Schematic

Maximum Ratings @T_A= 25°C unless otherwise specified

Characteristic

Collector-Base Voltage

Symbol

V_CBO

V_CEO

V_EBO

I_C

Value

Unit

Collector-Emitter Voltage

Emitter-Base Voltage

6.0

Collector Current

100

Thermal Characteristics

Characteristic

Symbol

Value

250

Unit

°C/W

°C

Power Dissipation (Note 3) @T_A= 25°C

P_D

500

Thermal Resistance, Junction to Ambient (Note 3) @T_A= 25°C

Operating and Storage Temperature Range

R_θ

-55 to +150

T_J, T_STG

Electrical Characteristics @T_A= 25°C unless otherwise specified

Characteristic (Note 4)

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

DC Current Gain

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

h_FE

Min

200

Typ

—

350

Max

—

450

Unit Test Condition

I_C= 10μA, I_B= 0

_C= 10mA, I_B= 0

_E= 1μA, I_C= 0

—

V_CE= 5.0V, I_C= 2.0mA

I_C= 10mA, I_B= 0.5mA

200

250

600

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Base-Emitter Voltage

—

V_CE(SAT)

V_BE(SAT)

V_BE(ON)

I_CBO

_C= 100mA, I_B= 5.0mA

I_C= 10mA, I_B= 0.5mA

I_C= 100mA, I_B= 5.0mA

—

700

900

—

_CE= 5.0V, I_C= 2.0mA

_CE= 5.0V, I_C= 10mA

_CB= 30V

_CB= 30V, T_A= 150°C

_CE= 5.0V, I_C= 10mA,

580

—

640

725

700

770

—

5.0

µA

Collector-Cutoff Current

Gain Bandwidth Product

100

—

MHz

f_T

f = 100MHz

V_CB= 10V, f = 1.0MHz

Collector-Base Capacitance

3.0

C_CBO

Notes:

1. No purposefully added lead.

2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php

3. Device mounted on FR-4 PCB, pad layout as shown on page 3, or Diodes Inc. suggested pad layout document AP02001 on our website at

http://www.diodes.com/datasheets/ap02001.pdf.

4. Short duration pulse test used to minimize self-heating effect.

1 of 4

www.diodes.com

July 2009

BC847BLP4

Document number: DS31297 Rev. 5 - 2

12 3 4

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