Datasheet > BC808-40E6327

BC808-40E6327

更新时间： 2022-12-01 19:56:05

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
11页	109K
描述
Small Signal Bipolar Transistor, 0.5A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon,

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BC808-40E6327 数据手册

BC807.../BC808...

Electrical Characteristics at T = 25°C, unless otherwise specified

Parameter

Symbol

Values

typ. max.

Unit

min.

DC Characteristics

Collector-emitter breakdown voltage

(BR)CEO

(BR)CBO

I = 10 mA, I = 0 , BC807...

I = 10 mA, I = 0 , BC808...

Collector-base breakdown voltage

I = 10 µA, I = 0 , BC807...

I = 10 µA, I = 0 , BC808...

Emitter-base breakdown voltage

I = 10 µA, I = 0

(BR)EBO

Collector-base cutoff current

µA

CBO

= 25 V, I = 0

0.1

= 25 V, I = 0 , T = 150 °C

100 nA

Emitter-base cutoff current

EBO

= 4 V, I = 0

250

400

630

DC current gain

I = 100 mA, V = 1 V, h -grp. 16

100

160

250

160

250

350

I = 100 mA, V = 1 V, h -grp. 25

I = 100 mA, V = 1 V, h grp. 40

I = 500 mA, V = 1 V

Collector-emitter saturation voltage

I = 500 mA, I = 50 mA

0.7

CEsat

BEsat

Base emitter saturation voltage

I = 500 mA, I = 50 mA

1.2

¹Pulse test: t < 300µs; D < 2%

2007-06-08

1 234 5 6 7...11

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