Datasheet > BC808-40E6327

BC808-40E6327

更新时间： 2024-01-28 17:23:12

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
11页	109K
描述
Small Signal Bipolar Transistor, 0.5A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon,

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数据手册
替代型号

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BC808-40E6327 数据手册

BC807.../BC808...

Maximum Ratings

Parameter

Symbol

Value

Unit

Collector-emitter voltage

BC807...

CEO

CBO

EBO

BC808...

Collector-base voltage

BC807...

BC808...

Emitter-base voltage

Collector current

500

1000

100

200

Peak collector current

Base current

Peak base current

Total power dissipation-

°C

tot

T ≤ 79 °C BC807, BC808

330

250

T ≤ 130 °C BC807W, BC808W

150

Junction temperature

Storage temperature

-65 ... 150

stg

Thermal Resistance

Parameter

Symbol

Value

Unit

K/W

Junction - soldering point

thJS

BC807, BC808

≤ 215

≤ 80

BC807W, BC808W

¹For calculation of R

please refer to Application Note Thermal Resistance

thJA

2007-06-08

123 4 5 6 7...11

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BC808-40E6327 替代型号

型号	品牌	替代类型	描述	数据表
BC808-40E6433	INFINEON	功能相似	Small Signal Bipolar Transistor, 0.5A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon

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