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BC808-40LT1G PDF预览

BC808-40LT1G

更新时间: 2024-11-05 06:41:39
品牌 Logo 应用领域
安森美 - ONSEMI 晶体小信号双极晶体管光电二极管
页数 文件大小 规格书
4页 125K
描述
General Purpose Transistors PNP Silicon

BC808-40LT1G 技术参数

是否无铅:不含铅生命周期:End Of Life
零件包装代码:SOT-23包装说明:HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, TO-236, 3 PIN
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.19
Is Samacsys:N最大集电极电流 (IC):0.5 A
集电极-发射极最大电压:25 V配置:SINGLE
最小直流电流增益 (hFE):250JEDEC-95代码:TO-236AB
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:PNP认证状态:Not Qualified
表面贴装:YES端子面层:Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管元件材料:SILICON
标称过渡频率 (fT):100 MHzBase Number Matches:1

BC808-40LT1G 数据手册

 浏览型号BC808-40LT1G的Datasheet PDF文件第2页浏览型号BC808-40LT1G的Datasheet PDF文件第3页浏览型号BC808-40LT1G的Datasheet PDF文件第4页 
BC808-25LT1G,  
BC808-40LT1G  
General Purpose  
Transistors  
PNP Silicon  
http://onsemi.com  
Features  
COLLECTOR  
3
These Devices are PbFree, Halogen Free/BFR Free and are RoHS  
Compliant  
1
BASE  
2
EMITTER  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
25  
Unit  
V
Collector Emitter Voltage  
Collector Base Voltage  
V
CEO  
3
V
CBO  
30  
V
1
Emitter Base Voltage  
V
5.0  
500  
V
EBO  
2
Collector Current Continuous  
THERMAL CHARACTERISTICS  
Characteristic  
I
C
mAdc  
SOT23  
CASE 318  
STYLE 6  
Symbol  
Max  
Unit  
Total Device Dissipation FR5 Board,  
P
D
MARKING DIAGRAM  
(Note 1) T = 25°C  
225  
1.8  
mW  
mW/°C  
A
Derate above 25°C  
Thermal Resistance,  
R
556  
°C/W  
q
JA  
5x M G  
JunctiontoAmbient  
G
Total Device Dissipation Alumina  
Substrate, (Note 2)  
P
D
1
T = 25°C  
300  
2.4  
mW  
mW/°C  
A
5x = Device Code  
x = F or G  
Derate above 25°C  
Thermal Resistance,  
R
q
417  
°C/W  
JA  
M
G
= Date Code*  
= PbFree Package  
JunctiontoAmbient  
Junction and Storage Temperature  
T , T  
J
55 to +150  
°C  
(Note: Microdot may be in either location)  
stg  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. FR5 = 1.0 x 0.75 x 0.062 in.  
*Date Code orientation and/or overbar may  
vary depending upon manufacturing location.  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 2 of this data sheet.  
2. Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina.  
©
Semiconductor Components Industries, LLC, 2009  
1
Publication Order Number:  
August, 2009 Rev. 2  
BC80825LT1/D  
 

BC808-40LT1G 替代型号

型号 品牌 替代类型 描述 数据表
BC808-25LT1 ONSEMI

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PNP Bipolar Transistor
BC808-40LT1 ONSEMI

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BC808-25LT1G ONSEMI

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General Purpose Transistors PNP Silicon

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