Datasheet > BC638

BC638

更新时间： 2024-11-13 06:41:39

品牌	Logo	应用领域
SECOS		晶体晶体管
页数	文件大小	规格书
2页	217K
描述
PNP Type Plastic Encapsulate Transistors

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中文翻译

获取价格

数据手册

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BC638 数据手册

BC636/638/640

PNP Type

Elektronische Bauelemente

Plastic Encapsulate Transistors

RoHS Compliant Product

A suffix of "-C" specifies halogen & lead-free

TO-92

FEATURE

4.55±0.2

3.5±0.2

Power Dissipation:

PCM: 0.83 mW (Tamb=25^oC)

+0.08

0.43

–0.07

46^+0.1

–0.1

(1.27 Typ).

1: Emitter

2: Collector

3: Base

1.25⁺–0⁰.^.2²

2 3

2.54±0.1

MAXIMUM RATINGS (TA=25 ^oC unless otherwise specified)

PARAMETERS

Collector - Emitter Voltage

SYMBOLS

V_CEO

VALUES

UNIT

BC636

BC638

BC640

BC636

BC638

BC640

-45

-60

-80

-45

-60

-100

-5

Collector - Base Voltage

V_CBO

Emitter - Base Voltage

V_EBO

I_C

Collector Current - Continuous

Collector Power Dissipation

-1

-1.5

100

I_CP

I_B

^oC

Junction, Storage Temperature

T_J,T_STG

R_θJA*

150, -65 ~ 150

150

Thermal Resistance from Junction to Ambient

K/w

ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise specified)

PARAMETERS

SYMBOL

TEST CONDITIONS

MIN

TYP MAX

UNIT

-45

-60

-80

IC=10mA, IB=0

BC636

BC638

BC640

Collector - emitter breakdown voltage

V_(BR)CEO

I_CBO

I_EBO

VCB=-30V, IE=0

Collector cut-off current

Emitter cut-off current

µA

-0.1

VEB=-5V, IB=0

h_FE(1)

h_FE(2)

VCE=-2V, IC=-5mA

BC636-10

VCE=-2V, IC=-150mA

160

250

DC current gain

BC636-16, BC638-16, BC640-16

VCE=-2V, IC=-500mA

100

h_FE(3)

V_CE(sat)

V_BE(ON)

f_T

IC=-500mA, IB=-50mA

VCE=-2V, IC=-500mA

Collector - emitter saturation voltage

Base - emitter voltage

-0.5

-1

VCE=-5V, IC=-50mA, f=100MHz 100

MHz

Transition frequency

CLASSIFICATION OF hFE(2)

BC636-10

63-160

BC636-16, BC638-16, BC640-16

100-250

RANK

RANGE

http://www.SeCoSGmbH.com/

Any changing of specification will not be informed individual

01-Jun-2002 Rev. A

Page 1 of 2

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