Datasheet > BC559_99

BC559_99

更新时间： 2024-11-29 08:49:35

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KEC		晶体晶体管局域网
页数	文件大小	规格书
1页	32K
描述
EPITAXIAL PLANAR PNP TRANSISTOR

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获取价格

数据手册

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BC559_99 数据手册

SEMICONDUCTOR

BC559/560

EPITAXIAL PLANAR PNP TRANSISTOR

TECHNICAL DATA

LOW NOISE APPLICATION.

FEATURE

For Complementary with NPN Type BC549/550.

DIM MILLIMETERS

4.70 MAX

4.80 MAX

3.70 MAX

0.45

MAXIMUM RATING (Ta=25

CHARACTERISTIC

)

SYMBOL

V_CBO

RATING

-30

UNIT

1.00

1.27

BC559

BC560

BC559

BC560

0.85

Collector-Base Voltage

0.45

-50

14.00 +0.50

0.55 MAX

2.30

-30

V_CEO

0.45 MAX

1.00

Collector-Emitter Voltage

-45

V_EBO

I_C

Emitter-Base Voltage

Collector Current

-5

1. COLLECTOR

2. BASE

-100

625

3. EMITTER

P_C

Collector Power Dissipation

Junction Temperature

Storage Temperature Range

T_j

150

TO-92

T_stg

-55 150

ELECTRICAL CHARACTERISTICS (Ta=25

)

CHARACTERISTIC

SYMBOL

TEST CONDITION

MIN.

-30

-45

-30

-50

-5.0

TYP.

MAX.

UNIT

BC559

BC560

BC559

BC560

Collector-Emitter

V_(BR)CEO

I_C=-10mA, I_B=0

Breakdown Voltage

Collector-Base

V_(BR)CBO

I_C=-10 A, I_E=0

Breakdown Voltage

V_(BR)EBO

I_CBO

Emitter-Base Breakdown Voltage

Collector Cut-off Current

DC Current Gain

I_E=-10 A, I_C=0

V_CB=-30V, I_E=0

-15

800

-0.7

-0.6

h_FE

I_C=-2mA, V_CE=-5V

I_C=-100mA, I_B=-5mA

110

-0.55

V_BE(ON)

V_CE(sat)

V_BE(sat)

f_T

Base-Emitter Voltage

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Transition Frequency

-0.9

300

I_C=-10mA, V_CE=-5V, f=100MHz

V_CB=-10V, I_E=0, f=1MHz

MHz

C_ob

Collector Output Capacitance

7.0

I_C=-200 A, V_CE=-5V

Rg=10k , f=1kHz

Noise Figure

4.0

Note : h_FEClassification A:110 220, B:200 450, C:420 800

1999. 11. 30

Revision No : 2

1/1

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