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BC556-A-T92-B PDF预览

BC556-A-T92-B

更新时间: 2024-02-27 08:25:21
品牌 Logo 应用领域
友顺 - UTC /
页数 文件大小 规格书
4页 199K
描述
Transistor

BC556-A-T92-B 技术参数

生命周期:ActiveReach Compliance Code:compliant
风险等级:5.61Base Number Matches:1

BC556-A-T92-B 数据手册

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BC556/557/558  
PNP SILICON TRANSISTOR  
„
ABSOLUTE MAXIMUM RATING (Ta=25°C, unless otherwise specified)  
PARAMETER  
SYMBOL  
RATINGS  
-80  
UNIT  
BC556  
BC557  
BC558  
BC556  
BC557  
BC558  
V
V
Collector-Base Voltage  
Collector-Emitter Voltage  
VCBO  
-50  
-30  
V
-65  
V
VCEO  
-45  
V
-30  
V
Emitter-Base Voltage  
VEBO  
IC  
-5  
V
Collector Current (DC)  
Power Collector Dissipation  
-100  
625  
mA  
mW  
mW/°C  
°C  
°C  
PC  
Linear Derating Factor above (Ta=25°C)  
Junction Temperature  
5
TJ  
150  
Storage Temperature  
TSTG  
-55~+150  
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.  
Absolute maximum ratings are stress ratings only and functional device operation is not implied.  
„
THERMAL DATA  
PARAMETER  
SYMBOL  
θJA  
RATINGS  
200  
UNIT  
°C/W  
°C/W  
Junction to Ambient  
Junction to Case  
θJc  
83.3  
„
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)  
PARAMETER SYMBOL TEST CONDITIONS  
MIN TYP MAX UNIT  
BC556  
BC557  
BC558  
BC556  
BC557  
BC558  
-65  
-45  
-30  
-80  
-50  
-30  
-5.0  
V
V
Collector-Emitter Breakdown Voltage  
Collector-Base Breakdown Voltage  
BVCEO IC=-10mA, IB=0  
V
V
BVCBO IC=-100μA  
V
V
Emitter-Base Breakdown Voltage  
Collector Cut-Off Current  
DC Current Gain  
BVEBO IE=-10μA, IC=0  
V
ICBO  
hFE  
IE = 0, VCB =-30 V  
-15  
nA  
VCE =-5V, IC=2mA  
110  
800  
IC =-10mA, IB=-0.5mA  
IC =-100mA, IB=-5mA  
IC =-10mA, IB =-0.5mA  
IC =-100mA, IB=-5mA  
VCE =-5 V,IC=-2mA  
-90 -300 mV  
-250 -650 mV  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
Base-Emitter Turn-On Voltage  
VCE(SAT)  
VBE(SAT)  
VBE(ON)  
-700  
-900  
mV  
mV  
-600 -660 -750 mV  
-800 mV  
VCE =-5 V,IC=-10mA  
VCE=-5V, IC=-10mA, f =10MHz  
VCB=-10V, IE=0, f=1MHz  
Current Gain Bandwidth Product  
Output Capacitance  
fT  
150  
MHz  
pF  
COB  
6
V
CE=-5V, IC=-200μA  
Noise Figure  
NF  
2
10  
dB  
f=1KHz, RG=2KΩ  
„
CLASSIFICATION OF hFE  
RANK  
hFE  
A
B
C
110 - 220  
200 - 450  
420 - 800  
UNISONIC TECHNOLOGIES CO., LTD  
2 of 4  
QW-R201-051.C  
www.unisonic.com.tw  

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