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BC369ZL1 PDF预览

BC369ZL1

更新时间: 2024-11-08 22:20:07
品牌 Logo 应用领域
安森美 - ONSEMI 晶体放大器小信号双极晶体管
页数 文件大小 规格书
4页 67K
描述
Amplifier Transistors

BC369ZL1 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-92包装说明:CASE 29-11, TO-226, 3 PIN
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.15Is Samacsys:N
其他特性:EUROPEAN PART NUMBER最大集电极电流 (IC):1 A
集电极-发射极最大电压:20 V配置:SINGLE
最小直流电流增益 (hFE):85JEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T3JESD-609代码:e0
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):240极性/信道类型:PNP
最大功率耗散 (Abs):0.8 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子位置:BOTTOM处于峰值回流温度下的最长时间:30
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):65 MHzBase Number Matches:1

BC369ZL1 数据手册

 浏览型号BC369ZL1的Datasheet PDF文件第2页浏览型号BC369ZL1的Datasheet PDF文件第3页浏览型号BC369ZL1的Datasheet PDF文件第4页 
BC368 (NPN), BC369 (PNP)  
Amplifier Transistors  
Voltage and Current are Negative  
for PNP Transistors  
Features  
http://onsemi.com  
Pb−Free Packages are Available*  
COLLECTOR  
2
COLLECTOR  
2
3
3
BASE  
BASE  
MAXIMUM RATINGS  
NPN  
EMITTER  
PNP  
Rating  
Symbol  
Value  
20  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
mW  
1
1
EMITTER  
CollectorEmitter Voltage  
CollectorEmitter Voltage  
EmitterBase Voltage  
V
CEO  
V
CES  
V
EBO  
25  
MARKING  
DIAGRAM  
5.0  
Collector Current − Continuous  
Total Device Dissipation  
I
C
1.0  
P
P
625  
CASE 29  
TO−92  
STYLE 14  
BC  
36x  
YWW  
D
@ T = 25°C  
A
Derate above 25°C  
5.0  
1.5  
mW/°C  
1
Total Device Dissipation  
Watt  
D
2
@ T = 25°C  
3
C
Derate above 25°C  
12  
mW/°C  
°C  
BC36x = Specific Device Code  
Operating and Storage Junction  
Temperature Range  
T , T  
55 to  
+150  
J
stg  
x
Y
= 8 or 9  
= Year  
WW = Work Week  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits  
are exceeded, device functional operation is not implied, damage may occur  
and reliability may be affected.  
ORDERING INFORMATION  
THERMAL CHARACTERISTICS  
Device  
Package  
TO−92  
Shipping  
Characteristic  
Symbol  
Max  
Unit  
BC368  
5000 Units/Box  
Thermal Resistance,  
R
200  
°C/W  
q
JA  
Junction−to−Ambient  
BC368ZL1  
TO−92  
2000/Ammo Pack  
2000/Ammo Pack  
Thermal Resistance,  
Junction−to−Case  
R
83.3  
°C/W  
q
JC  
BC368ZL1G  
TO−92  
(Pb−Free)  
BC369  
TO−92  
TO−92  
5000 Units/Box  
2000/Ammo Pack  
2000/Ammo Pack  
BC369ZL1  
BC369ZL1G  
TO−92  
(Pb−Free)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
Semiconductor Components Industries, LLC, 2004  
1
Publication Order Number:  
May, 2004 − Rev. 4  
BC368/D  

BC369ZL1 替代型号

型号 品牌 替代类型 描述 数据表
BC369ZL1G ONSEMI

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