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BC372/D PDF预览

BC372/D

更新时间: 2024-11-26 23:34:43
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4页 55K
描述
Darlington Transistor NPN

BC372/D 数据手册

 浏览型号BC372/D的Datasheet PDF文件第2页浏览型号BC372/D的Datasheet PDF文件第3页浏览型号BC372/D的Datasheet PDF文件第4页 
BC372  
BC373  
High Voltage  
Darlington Transistors  
NPN Silicon  
MAXIMUM RATINGS  
Rating  
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
Symbol  
BC372 BC373  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
V
100  
100  
80  
80  
CES  
CBO  
EBO  
1
V
V
2
3
12  
Collector Current — Continuous  
I
C
1.0  
CASE 29–04, STYLE 1  
TO–92 (TO–226AA)  
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
625  
5.0  
mW  
mW/°C  
A
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
1.5  
12  
Watt  
mW/°C  
C
Operating and Storage Junction  
Temperature Range  
T , T  
–55 to +150  
°C  
J
stg  
COLLECTOR 3  
THERMAL CHARACTERISTICS  
Characteristic  
BASE  
2
Symbol  
Max  
200  
Unit  
°C/W  
°C/W  
Thermal Resistance, Junction to Ambient  
Thermal Resistance, Junction to Case  
R
q
JA  
JC  
R
83.3  
q
EMITTER 1  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
(1)  
Collector–Emitter Breakdown Voltage  
V
Vdc  
(BR)CES  
(BR)CBO  
(BR)EBO  
(I = 100 mAdc, I = 0)  
BC372  
BC373  
100  
80  
C
B
Collector–Base Breakdown Voltage  
(I = 100 mAdc, I = 0)  
V
V
Vdc  
BC372  
BC373  
100  
80  
C
E
Emitter–Base Breakdown Voltage  
(I = 10 mAdc, I = 0)  
12  
Vdc  
E
C
Collector Cutoff Current  
(V = 80 Vdc, I = 0)  
I
nAdc  
CBO  
BC372  
BC373  
100  
100  
CB  
E
(V = 60 Vdc, I = 0)  
CB  
E
Emitter Cutoff Current  
(V = 10 V, I = 0)  
I
100  
nAdc  
EBO  
EB  
C
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%.  
Semiconductor Components Industries, LLC, 2001  
1
Publication Order Number:  
February, 2001 – Rev. 1  
BC372/D  

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