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BC327AD27Z PDF预览

BC327AD27Z

更新时间: 2024-11-07 14:47:59
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 开关晶体管
页数 文件大小 规格书
4页 93K
描述
Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-92

BC327AD27Z 技术参数

生命周期:Obsolete包装说明:CYLINDRICAL, O-PBCY-T3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.58
Is Samacsys:N最大集电极电流 (IC):0.8 A
集电极-发射极最大电压:50 V配置:SINGLE
最小直流电流增益 (hFE):100JEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
极性/信道类型:PNP认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:BOTTOM晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):100 MHz
Base Number Matches:1

BC327AD27Z 数据手册

 浏览型号BC327AD27Z的Datasheet PDF文件第2页浏览型号BC327AD27Z的Datasheet PDF文件第3页浏览型号BC327AD27Z的Datasheet PDF文件第4页 
BC327/328  
PNP EPITAXIAL SILICON TRANSISTOR  
SWITCHING AND AMPLIFIER APPLICATIONS  
· Suitable for AF-Driver stages and low power output stages  
· Complement to BC337/BC338  
TO-92  
ABSOLUTE MAXIMUM RATINGS (TA=25°C)  
Characteristic  
Symbol  
Rating  
Unit  
Collector-Emitter Voltage  
VCES  
: BC327  
: BC328  
Collector-Emitter Voltage  
-50  
-30  
V
V
VCEO  
: BC327  
: BC328  
-45  
-25  
V
V
Emitter-Base Voltage  
Collector Current (DC)  
Collector Dissipation  
Junction Temperature  
Storage Temperature  
VEBO  
IC  
PC  
TJ  
TSTG  
V
-5  
-800  
625  
150  
-55 ~ 150  
mA  
mW  
°C  
°C  
1. Collector 2. Base 3. Emitter  
ELECTRICAL CHARACTERISTICS (TA=25°C)  
Characteristic  
Symbol  
Test Conditions  
Min  
Typ  
Max  
Unit  
IC= -10mA, IB=0  
Collector Emitter Breakdown Voltage  
BVCEO  
-45  
-25  
: BC327  
: BC328  
V
V
IC= -0.1mA, IB=0  
IE= -10mA, IC=0  
Collector Emitter Breakdown Voltage  
: BC327  
BVCES  
-50  
-30  
-5  
V
V
V
: BC328  
Emitter Base Breakdown Voltage  
Collector Cut-off Current  
: BC307  
BVEBO  
ICES  
VCE= -45V, IB=0  
VCE= -25V, IB=0  
nA  
nA  
-2  
-2  
-100  
-100  
630  
: BC338  
VCE= -1V, IC= -100mA  
VCE= -1V, IC= -30mA  
IC= -500mA, IB= -50mA  
VCE= -1V, IC= -300mA  
VCE= -5V, IC= -10mA  
DC Current Gain  
hFE  
100  
60  
hFE  
2
VCE (sat)  
VBE (on)  
fT  
-0.7  
-1.2  
V
V
MHz  
Collector-Emitter Saturation Voltage  
Base Emitter On Voltage  
Current Gain Bandwidth Product  
100  
12  
Collector Base Capacitance  
pF  
CCBO  
VCB= -10V, f=1MHz  
hFE CLASSIFICATION  
Classification  
A
B
C
hFE  
100-250  
60-  
160-400  
100-  
250-630  
170-  
hFE2  
Rev. B  
ã
1999 Fairchild Semiconductor Corporation  

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