生命周期: | Obsolete | 包装说明: | CYLINDRICAL, O-PBCY-T3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.21.00.95 | 风险等级: | 5.34 |
Is Samacsys: | N | 最大集电极电流 (IC): | 0.5 A |
集电极-发射极最大电压: | 60 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 100 | JEDEC-95代码: | TO-92 |
JESD-30 代码: | O-PBCY-T3 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | ROUND |
封装形式: | CYLINDRICAL | 极性/信道类型: | PNP |
最大功率耗散 (Abs): | 0.325 W | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | BOTTOM |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 80 MHz | VCEsat-Max: | 0.7 V |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BC327B | FAIRCHILD |
获取价格 |
Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-92 | |
BC327-B | SAMSUNG |
获取价格 |
Small Signal Bipolar Transistor, 0.8A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, | |
BC327BD | ZETEX |
获取价格 |
TRANSISTOR,BJT,PNP,45V V(BR)CEO,CHIP / DIE | |
BC327BD26Z | FAIRCHILD |
获取价格 |
Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-92 | |
BC327BD27Z | FAIRCHILD |
获取价格 |
Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-92 | |
BC327BD74Z | FAIRCHILD |
获取价格 |
Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-92 | |
BC327BD75Z | FAIRCHILD |
获取价格 |
Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-92 | |
BC327BDWP | ZETEX |
获取价格 |
45V, PNP, Si, SMALL SIGNAL TRANSISTOR, 0.026 X 0.026 INCH, G11, DIE-2 | |
BC327BJ05Z | FAIRCHILD |
获取价格 |
Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, | |
BC327BJ18Z | FAIRCHILD |
获取价格 |
Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, |