Datasheet > BC327-25D74Z

BC327-25D74Z

更新时间： 2024-11-08 04:00:35

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
5页	68K
描述
Small Signal Bipolar Transistor, 0.8A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-92

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BC327-25D74Z 数据手册

BC327/328

Switching and Amplifier Applications

•

Suitable for AF-Driver stages and low power output stages

Complement to BC337/BC338

TO-92

1. Collector 2. Base 3. Emitter

PNP Epitaxial Silicon Transistor

Absolute Maximum Ratings ^{T =25°C unless otherwise noted}

Symbol

Parameter

Value

Units

Collector-Emitter Voltage

: BC327

: BC328

Collector-Emitter Voltage

CES

-50

-30

CEO

EBO

: BC327

: BC328

-45

-25

Emitter-Base Voltage

-5

-800

Collector Current (DC)

Collector Dissipation

Junction Temperature

Storage Temperature

°C

625

150

-55 ~ 150

°C

STG

Electrical Characteristics ^{T =25°C unless otherwise noted}

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Units

Collector-Emitter Breakdown Voltage I = -10mA, I =0

CEO

CES

EBO

: BC327

: BC328

-45

-25

Collector-Emitter Breakdown Voltage I = -0.1mA, V =0

: BC327

: BC328

-50

-30

Emitter-Base Breakdown Voltage

IE= -10µA, I =0

-5

Collector Cut-off Current

: BC307

CES

= -45V, V =0

= -25V, V =0

-2

-100

: BC338

DC Current Gain

= -1V, I = -100mA

100

630

FE1

FE2

= -1V, I = -300mA

(sat) Collector-Emitter Saturation Voltage

(on) Base-Emitter On Voltage

Current Gain Bandwidth Product

Output Capacitance

I = -500mA, I = -50mA

-0.7

-1.2

= -1V, I = -300mA

= -5V, I = -10mA, f=20MHz

100

MHz

= -10V, I =0, f=1MHz

Classification

100 ~ 250

60-

160 ~ 400

100-

250 ~ 630

170-

FE1

FE2

Rev. A, February 2000

12 3 4 5

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