是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | , | Reach Compliance Code: | unknown |
风险等级: | 5.89 | Is Samacsys: | N |
最大集电极电流 (IC): | 0.8 A | 配置: | Single |
最小直流电流增益 (hFE): | 100 | JESD-609代码: | e0 |
最高工作温度: | 150 °C | 极性/信道类型: | PNP |
最大功率耗散 (Abs): | 0.625 W | 子类别: | Other Transistors |
表面贴装: | NO | 端子面层: | Tin/Lead (Sn/Pb) |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BC32716TAR | ONSEMI |
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Small Signal Bipolar Transistor, 0.8A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-92 | |
BC32716TAR | FAIRCHILD |
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Small Signal Bipolar Transistor, 0.8A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, | |
BC32716TF | FAIRCHILD |
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Small Signal Bipolar Transistor, 0.8A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, | |
BC32716TFR | FAIRCHILD |
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Small Signal Bipolar Transistor, 0.8A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, | |
BC327-16ZL1 | ETC |
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TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 800MA I(C) | TO-92 | |
BC32725 | FAIRCHILD |
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PNP EPITAXIAL SILICON TRANSISTOR | |
BC327-25 | NXP |
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PNP general purpose transistor | |
BC327-25 | MOTOROLA |
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Amplifier Transistors(PNP) | |
BC327-25 | ONSEMI |
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Amplifier Transistors(PNP Silicon) | |
BC327-25 | INFINEON |
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PNP Silicon AF Transistors (High current gain High collector current Low collector-emitter |