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BC184-D27Z PDF预览

BC184-D27Z

更新时间: 2024-11-26 20:05:31
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
3页 99K
描述
Transistor

BC184-D27Z 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:,Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.84
最大集电极电流 (IC):0.1 A配置:Single
最小直流电流增益 (hFE):100JESD-609代码:e3
最高工作温度:150 °C极性/信道类型:NPN
最大功率耗散 (Abs):0.35 W子类别:Other Transistors
表面贴装:NO端子面层:Matte Tin (Sn)
标称过渡频率 (fT):150 MHzBase Number Matches:1

BC184-D27Z 数据手册

 浏览型号BC184-D27Z的Datasheet PDF文件第2页浏览型号BC184-D27Z的Datasheet PDF文件第3页 
September 2007  
BC184  
Silicon NPN Small Signal Transistor  
BVCEO = 30V (Min.)  
hFE = 130 (Min.) @VCE = 5.0V, IC = 100mA  
TO-92  
1. Collector 2. Base 3. Emitter  
1
Absolute Maximum Ratings TC=25°C unless otherwise noted  
Symbol Parameter  
Value  
Units  
VCEO  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector Current (DC)  
30  
V
VCBO  
VEBO  
I C  
45  
5
V
V
100  
mA  
°C  
TJ, TSTG  
Operating and Storage Junction Temperature Range  
-55 ~ +150  
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Thermal Characteristics Ta=25°C unless otherwise noted  
Symbol  
Parameter  
Max.  
Units  
PD  
Total Device Dissipation  
Derate above 25°C  
350  
2.8  
mW  
mW/°C  
RθJC  
RθJA  
Thermal Resistance, Junction to Case  
125  
357  
°C/W  
°C/W  
Thermal Resistance, Junction to Ambient  
*Device mounted on FR-4 PCB 1.6” X 1.6” X 0.06”.  
© 2007 Fairchild Semiconductor Corporation  
BC184 Rev. 1.0.0  
www.fairchildsemi.com  
1

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