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BBY53-03W PDF预览

BBY53-03W

更新时间: 2024-11-15 22:10:19
品牌 Logo 应用领域
英飞凌 - INFINEON 二极管变容二极管光电二极管
页数 文件大小 规格书
3页 36K
描述
Silicon Tuning Diode (High Q hyperabrupt tuning diode Designed for low tuning voltage operation)

BBY53-03W 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SOD
包装说明:R-PDSO-G2针数:2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.09
Is Samacsys:N最小击穿电压:6 V
配置:SINGLE二极管电容容差:9.43%
最小二极管电容比:1.8标称二极管电容:5.3 pF
二极管元件材料:SILICON二极管类型:VARIABLE CAPACITANCE DIODE
JESD-30 代码:R-PDSO-G2湿度敏感等级:1
元件数量:1端子数量:2
最高工作温度:125 °C最低工作温度:-55 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:6 V
子类别:Varactors表面贴装:YES
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED变容二极管分类:HYPERABRUPT
Base Number Matches:1

BBY53-03W 数据手册

 浏览型号BBY53-03W的Datasheet PDF文件第2页浏览型号BBY53-03W的Datasheet PDF文件第3页 
BBY 53-03W  
Silicon Tuning Diode  
Preliminary data  
• High Q hyperabrupt tuning diode  
• Designed for low tuning voltage operation  
for VCO's in mobile communications equipment  
• High ratio at low reverse voltage  
Type  
Marking Ordering Code Pin Configuration  
Package  
BBY 53-03W  
white/5  
Q62702-B0825 1 = C  
2 = A  
SOD-323  
Maximum Ratings  
Parameter  
Symbol  
Values  
Unit  
V
Diode reverse voltage  
Forward current  
V
R
6
I
20  
mA  
°C  
F
Operating temperature range  
Storage temperature  
T
T
- 55 ... + 150  
- 55 ... + 150  
op  
stg  
Semiconductor Group  
1
Sep-11-1996  

BBY53-03W 替代型号

型号 品牌 替代类型 描述 数据表
BB833E6327 INFINEON

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