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BBY53E6327

更新时间: 2024-11-16 14:47:59
品牌 Logo 应用领域
英飞凌 - INFINEON 光电二极管变容二极管
页数 文件大小 规格书
11页 982K
描述
Variable Capacitance Diode, 5.3pF C(T), 6V, Silicon, Hyperabrupt

BBY53E6327 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:R-PDSO-G3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.06最小击穿电压:6 V
配置:COMMON CATHODE, 2 ELEMENTS最小二极管电容比:1.8
标称二极管电容:5.3 pF二极管元件材料:SILICON
二极管类型:VARIABLE CAPACITANCE DIODEJESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:1
元件数量:2端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
认证状态:Not Qualified最大重复峰值反向电压:6 V
子类别:Varactors表面贴装:YES
端子面层:MATTE TIN端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
变容二极管分类:HYPERABRUPTBase Number Matches:1

BBY53E6327 数据手册

 浏览型号BBY53E6327的Datasheet PDF文件第2页浏览型号BBY53E6327的Datasheet PDF文件第3页浏览型号BBY53E6327的Datasheet PDF文件第4页浏览型号BBY53E6327的Datasheet PDF文件第5页浏览型号BBY53E6327的Datasheet PDF文件第6页浏览型号BBY53E6327的Datasheet PDF文件第7页 
BBY53...  
Silicon Tuning Diode  
High Q hyperabrupt tuning diode  
Designed for low tuning voltage operation  
for VCO's in mobile communications equipment  
High ratio at low reverse voltage  
Pb-free (RoHS compliant) package  
BBY53-02L  
BBY53-02V  
BBY53-02W  
BBY53-03W  
BBY53  
BBY53-05W  
3
D
2
1
2
D
1
1
2
Type  
Package  
SOT23  
TSLP-2-1  
SC79  
SCD80  
SOD323  
SOT323  
Configuration  
common cathode  
single, leadless  
single  
single  
single  
L (nH) Marking  
S
BBY53  
2
S7s  
LL  
BBY53-02L  
BBY53-02V  
BBY53-02W  
BBY53-03W  
BBY53-05W  
0.4  
0.6  
0.6  
1.8  
1.4  
L
LL  
white 5  
S7s  
common cathode  
Maximum Ratings at T = 25°C, unless otherwise specified  
A
Parameter  
Symbol  
Value  
Unit  
6
20  
V
mA  
°C  
Diode reverse voltage  
Forward current  
Operating temperature range  
Storage temperature  
V
R
I
F
T
T
-55 ... 125  
-55 ... 150  
op  
stg  
2011-06-15  
1

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