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BBY5305WE6327HTSA1 PDF预览

BBY5305WE6327HTSA1

更新时间: 2024-11-16 15:28:27
品牌 Logo 应用领域
英飞凌 - INFINEON 光电二极管变容二极管
页数 文件大小 规格书
11页 988K
描述
Variable Capacitance Diode, Ultra High Frequency, 5.3pF C(T), 6V, Silicon, Hyperabrupt, ROHS COMPLIANT PACKAGE-3

BBY5305WE6327HTSA1 技术参数

生命周期:Active包装说明:R-PDSO-G3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.62
最小击穿电压:6 V配置:COMMON CATHODE, 2 ELEMENTS
二极管电容容差:9.43%最小二极管电容比:1.8
标称二极管电容:5.3 pF二极管元件材料:SILICON
二极管类型:VARIABLE CAPACITANCE DIODE频带:ULTRA HIGH FREQUENCY
JESD-30 代码:R-PDSO-G3元件数量:2
端子数量:3最高工作温度:125 °C
最低工作温度:-55 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
表面贴装:YES端子形式:GULL WING
端子位置:DUAL变容二极管分类:HYPERABRUPT
Base Number Matches:1

BBY5305WE6327HTSA1 数据手册

 浏览型号BBY5305WE6327HTSA1的Datasheet PDF文件第2页浏览型号BBY5305WE6327HTSA1的Datasheet PDF文件第3页浏览型号BBY5305WE6327HTSA1的Datasheet PDF文件第4页浏览型号BBY5305WE6327HTSA1的Datasheet PDF文件第5页浏览型号BBY5305WE6327HTSA1的Datasheet PDF文件第6页浏览型号BBY5305WE6327HTSA1的Datasheet PDF文件第7页 
BBY53...  
Silicon Tuning Diode  
High Q hyperabrupt tuning diode  
Designed for low tuning voltage operation  
for VCO's in mobile communications equipment  
High ratio at low reverse voltage  
Pb-free (RoHS compliant) package  
BBY53-02L  
BBY53-02V  
BBY53-02W  
BBY53-03W  
BBY53  
BBY53-05W  
3
D
2
1
2
D
1
1
2
Type  
Package  
SOT23  
TSLP-2-1  
SC79  
SCD80  
SOD323  
SOT323  
Configuration  
common cathode  
single, leadless  
single  
single  
single  
L (nH) Marking  
S
BBY53  
2
S7s  
LL  
BBY53-02L  
BBY53-02V  
BBY53-02W  
BBY53-03W  
BBY53-05W  
0.4  
0.6  
0.6  
1.8  
1.4  
L
LL  
white 5  
S7s  
common cathode  
Maximum Ratings at T = 25°C, unless otherwise specified  
A
Parameter  
Symbol  
Value  
Unit  
6
20  
V
mA  
°C  
Diode reverse voltage  
Forward current  
Operating temperature range  
Storage temperature  
V
R
I
F
T
T
-55 ... 125  
-55 ... 150  
op  
stg  
2011-06-15  
1

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