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BAX16_08 PDF预览

BAX16_08

更新时间: 2024-11-21 12:51:03
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 二极管高压
页数 文件大小 规格书
4页 426K
描述
High Voltage General Purpose Diode

BAX16_08 数据手册

 浏览型号BAX16_08的Datasheet PDF文件第2页浏览型号BAX16_08的Datasheet PDF文件第3页浏览型号BAX16_08的Datasheet PDF文件第4页 
April 2008  
BAX16  
High Voltage General Purpose Diode  
DO-35 Glass case  
COLOR BAND DENOTES CATHODE  
Absolute Maximum Ratings * T = 25°C unless otherwise noted  
a
Symbol  
Parameter  
Maximum Repetitive Reverse Voltage  
Average Rectified Forward Current  
Recurrent Peak Forward Current  
Value  
150  
Unit  
V
VRRM  
IF(AV)  
if  
200  
mA  
mA  
600  
IFSM  
Non-repetitive Peak Forward Surge Current  
Pulse Width = 1.0 s  
1
4
A
A
Pulse Width = 1.0 ms  
TSTG  
TJ  
Storage Temperature Range  
-65 to 200  
175  
°C  
°C  
Operating Junction Temperature  
* These ratings are limiting values above which the serviceability of the diode may be impaired.  
Notes:  
1) These ratings are based on a maximum junction temperature of 200degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Electrical Characteristics * T = 25°C unless otherwise noted  
a
Symbol  
Parameter  
Conditions  
Min.  
Max.  
Units  
VR  
Breakdown Voltage  
IR = 100mA  
180  
V
V
VF  
Forward Voltage  
Forward Voltage  
IF = 1.0mA  
0.65  
VFP  
IF = 100mA  
IF = 200mA  
1.3  
1.5  
Pulse Width = 300ms  
IR  
Reverse Leakage  
VR = 50V  
VR = 50V, TA = 150°C  
VR = 150V  
25  
25  
100  
100  
nA  
mA  
nA  
mA  
VR = 150V, TA = 150°C  
trr  
Reverse Recovery Time  
IF = 30mA, IR = 30mA,  
120  
ns  
Irr = 1.0mA, RL = 100W  
© 2007 Fairchild Semiconductor Corporation  
BAX16 Rev. 1.0.0  
www.fairchildsemi.com  
1

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