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BAW74S62Z PDF预览

BAW74S62Z

更新时间: 2024-02-16 22:36:19
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
1页 22K
描述
Rectifier Diode, 2 Element, 0.2A, 50V V(RRM), Silicon

BAW74S62Z 数据手册

  
BAW74  
Connection Diagram  
3
3
3
JD  
2
1
2
1
2
1
SOT-23  
Small Signal Diode  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
VRRM  
IF(AV)  
IFSM  
Maximum Repetitive Reverse Voltage  
50  
V
Average Rectified Forward Current  
200  
mA  
Non-repetitive Peak Forward Surge Current  
Pulse Width = 1.0 second  
1.0  
2.0  
A
A
Pulse Width = 1.0 microsecond  
Storage Temperature Range  
-55 to +150  
C
°
Tstg  
TJ  
Operating Junction Temperature  
150  
°C  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Thermal Characteristics  
Symbol  
Parameter  
Value  
Units  
PD  
Power Dissipation  
Thermal Resistance, Junction to Ambient  
350  
357  
mW  
RθJA  
°C/W  
Electrical Characteristics  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Test Conditions  
Min Max  
Units  
VR  
Breakdown Voltage  
V
V
50  
I = 100  
A
µ
R
VF*  
IR*  
CT  
trr  
Forward Voltage  
IF = 100 mA  
1.0  
Reverse Current  
µA  
pF  
ns  
100  
2.0  
VR = 50 V, TA = 150°C  
VR = 0, f = 1.0 MHz  
Total Capacitance  
Reverse Recovery Time  
IF = IR = 10 mA, IRR = 1.0 mA,  
4.0  
RL = 100 Ω  
*Pulse test : Pulse width=300us, Duty Cycle=2%  
2002 Fairchild Semiconductor Corporation  
BAW74, Rev.  
A

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