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BAW75 PDF预览

BAW75

更新时间: 2024-02-03 23:28:12
品牌 Logo 应用领域
EIC 整流二极管开关
页数 文件大小 规格书
2页 33K
描述
HIGH SPEED SWITCHING DIODES

BAW75 技术参数

生命周期:TransferredReach Compliance Code:unknown
风险等级:5.71外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1 V
JESD-30 代码:O-LALF-W2元件数量:1
端子数量:2最大输出电流:0.15 A
封装主体材料:GLASS封装形状:ROUND
封装形式:LONG FORM最大功率耗散:0.5 W
认证状态:Not Qualified最大重复峰值反向电压:35 V
最大反向电流:0.1 µA最大反向恢复时间:0.002 µs
表面贴装:NO端子形式:WIRE
端子位置:AXIALBase Number Matches:1

BAW75 数据手册

 浏览型号BAW75的Datasheet PDF文件第2页 
HIGH SPEED SWITCHING DIODES  
BAW75 ~ BAW76  
DO - 35 Glass  
(DO-204AH)  
FEATURES :  
• High switching speed: max. 4 ns  
• Reverse voltage:max. 25V , 50V  
• Peak reverse voltage:max. 35V, 75 V  
• Pb / RoHS Free  
1.00 (25.4)  
0.079(2.0 )max.  
min.  
0.150 (3.8)  
Cathode  
max.  
Mark  
1.00 (25.4)  
0.020 (0.52)max.  
min.  
MECHANICAL DATA :  
Case: DO-35 Glass Case  
Weight: approx. 0.13g  
Dimensions in inches and ( millimeters )  
Maximum Ratings and Thermal Characteristics (Rating at 25 °C ambient temperature unless otherwise specified.)  
Parameter  
Symbol  
Value  
25  
Unit  
BAW75  
BAW76  
BAW75  
BAW76  
VRM  
Maximum Peak Reverse Voltage  
V
50  
35  
VRM  
Maximum Reverse Voltage  
V
75  
Maximum Average Forward Current  
Half Wave Recitication with Resistive Load , f ³ 50Hz  
Maximum Power Dissipation  
150 (1)  
IF(AV)  
mA  
500 (1)  
2
PD  
IFSM  
TJ  
mW  
A
Maximum Surge Forward Current at t < 1ms , Tj = 25 °C  
Maximum Junction Temperature  
200  
°C  
°C  
TS  
Storage Temperature Range  
-65 to + 200  
Note : (1) Valid provided that leads are kept at ambient temperature at a distance of 8mm from case.  
Electrical Characteristics (TJ = 25°C unless otherwise noted)  
Test Condition  
Min  
Typ  
Max  
Unit  
Parameter  
Symbol  
VR = 25 V  
VR = 50 V  
IF = 30 mA  
IF = 100 mA  
BAW75  
BAW76  
BAW75  
BAW76  
BAW75  
BAW76  
BAW75  
BAW76  
-
-
-
-
-
-
-
-
-
-
100  
100  
1.0  
1.0  
-
IR  
Reverse Current  
Forward Voltage  
nA  
-
VF  
V(BR)R  
Cd  
V
V
-
35  
75  
-
Reverse Breakdown Voltage  
Diode Capacitance  
Test with 5mA pulses  
-
4.0  
2.0  
f = 1MHz ; VR = 0  
pF  
ns  
-
IF = 10 mA , IR = 10 mA  
Irr = 1mA  
Reverse Recovery Time  
Trr  
-
-
4
Page 1 of 2  
Rev. 02 : March 25, 2005  

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