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BAW62

更新时间: 2024-02-21 15:30:23
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 整流二极管信号二极管
页数 文件大小 规格书
2页 29K
描述
Small Signal Diode

BAW62 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:DO-35包装说明:O-LALF-W2
针数:2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.70
风险等级:5.74外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1 V
JEDEC-95代码:DO-35JESD-30 代码:O-LALF-W2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:2 A元件数量:1
端子数量:2最高工作温度:200 °C
最大输出电流:0.25 A封装主体材料:GLASS
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):NOT SPECIFIED最大功率耗散:0.35 W
认证状态:Not Qualified参考标准:CECC50001-021
最大重复峰值反向电压:75 V最大反向电流:5 µA
最大反向恢复时间:0.004 µs子类别:Rectifier Diodes
表面贴装:NO技术:AVALANCHE
端子面层:Tin (Sn)端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

BAW62 数据手册

 浏览型号BAW62的Datasheet PDF文件第2页 
December 2004  
BAW62  
Small Signal Diode  
DO-35  
Color Band Denotes Cathode  
Absolute Maximum Ratings *  
T
= 25°C unless otherwise noted  
a
Symbol  
Parameter  
Maximum Repetitive Reverse Voltage  
Average Rectified Forward Current  
Value  
75  
Unit  
V
V
RRM  
F(AV)  
FSM  
I
I
300  
mA  
Non-repetitive Peak Forward Surge Current  
Pulse Width = 1.0 second  
1.0  
4.0  
A
A
Pulse Width = 1.0 microsecond  
T
T
Storage Temperature Range  
-65 to +200  
175  
°C  
°C  
STG  
J
Operating Junction Temperature  
* These ratings are limiting values above which the serviceability of the diode may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 200 degrees C.  
2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Thermal Characteristics  
Symbol  
Parameter  
Value  
500  
Unit  
mW  
P
Power Dissipation  
Thermal Resistance, Junction to Ambient  
D
R
300  
°C/W  
θJA  
Electrical Characteristics  
T = 25°C unless otherwise noted  
C
Symbol  
Parameter  
Conditions  
Min.  
Max  
Units  
V
V
Breakdown Voltage  
I
= 5µA  
75  
V
R
F
R
Forward Voltage  
I
I
I
= 5mA  
= 100mA  
= 100mA, T = 100°C  
0.62  
0.75  
1.0  
0.93  
V
V
V
F
F
F
I
Reverse Leakage  
V
V
V
V
V
= 20V  
= 20V, T = 150°C  
= 50V  
= 75V  
= 75V, T = 150°C  
25  
50  
200  
5
nA  
µA  
nA  
µA  
µA  
R
R
R
R
R
R
A
100  
A
C
Total Capacitance  
V
= 0, f = 1.0MHz  
2
4
pF  
ns  
T
R
t
Reverse Recovery Time  
I = I = 10mA, I = 1mA, R = 100,  
F R rr L  
rr  
©2004 Fairchild Semiconductor Corporation  
BAW62 Rev. A  
1
www.fairchildsemi.com  

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