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BAV99W-7 PDF预览

BAV99W-7

更新时间: 2024-11-12 22:25:39
品牌 Logo 应用领域
美台 - DIODES 二极管开关
页数 文件大小 规格书
3页 61K
描述
DUAL SURFACE MOUNT SWITCHING DIODE

BAV99W-7 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete包装说明:R-PDSO-G3
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.70
风险等级:5配置:SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.715 VJESD-30 代码:R-PDSO-G3
JESD-609代码:e0湿度敏感等级:1
最大非重复峰值正向电流:2 A元件数量:2
端子数量:3最高工作温度:150 °C
最低工作温度:-65 °C最大输出电流:0.15 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):235
最大功率耗散:0.2 W认证状态:Not Qualified
最大重复峰值反向电压:75 V最大反向恢复时间:0.004 µs
子类别:Rectifier Diodes表面贴装:YES
端子面层:Tin/Lead (Sn85Pb15)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:10
Base Number Matches:1

BAV99W-7 数据手册

 浏览型号BAV99W-7的Datasheet PDF文件第2页浏览型号BAV99W-7的Datasheet PDF文件第3页 
BAV99W  
DUAL SURFACE MOUNT SWITCHING DIODE  
Features  
·
·
·
·
Fast Switching Speed  
SOT-323  
A
Ultra-small Surface Mount Package  
For General Purpose Switching Applications  
High Conductance  
Dim  
A
B
C
D
E
Min  
0.25  
1.15  
2.00  
Max  
0.40  
1.35  
2.20  
B
C
0.65 Nominal  
G
H
Mechanical Data  
0.30  
1.20  
1.80  
0.0  
0.40  
1.40  
2.20  
0.10  
1.00  
0.40  
0.18  
8°  
K
J
G
H
J
M
·
·
·
·
Case: SOT-323, Molded Plastic  
Case Material - UL Flammability Rating 94V-0  
Moisture sensitivity: Level 1 per J-STD-020A  
Terminals: Solderable per MIL-STD-202,  
Method 208  
Polarity: See Diagram  
Marking: KJG (See Page 3)  
Weight: 0.006 grams (approx.)  
L
D
E
K
L
0.90  
0.25  
0.10  
0°  
·
·
·
M
a
TOP VIEW  
All Dimensions in mm  
@ TA = 25°C unless otherwise specified  
Maximum Ratings  
Characteristic  
Symbol  
Value  
Unit  
VRM  
Non-Repetitive Peak Reverse Voltage  
100  
V
VRRM  
VRWM  
VR  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
V
75  
VR(RMS)  
IFM  
RMS Reverse Voltage  
53  
V
Forward Continuous Current (Note 1)  
Average Rectified Output Current (Note 1)  
Non-Repetitive Peak Forward Surge Current @ t = 1.0ms  
300  
150  
mA  
mA  
IO  
2.0  
1.0  
IFSM  
A
(Note 1)  
@ t = 1.0s  
Pd  
Power Dissipation (Note 1)  
200  
625  
mW  
°C/W  
°C  
RqJA  
Thermal Resistance Junction to Ambient Air (Note 1)  
Operating and Storage Temperature Range  
Tj , TSTG  
-65 to +150  
@ TA = 25°C unless otherwise specified  
Electrical Characteristics  
Characteristic  
Symbol  
Min  
Max  
Unit  
Test Condition  
V(BR)R  
Reverse Breakdown Voltage (Note 2)  
IR= 2.5mA  
75  
¾
V
IF = 1.0mA  
IF = 10mA  
IF = 50mA  
IF = 150mA  
0.715  
0.855  
1.0  
VF  
Forward Voltage (Note 2)  
Reverse Current (Note 2)  
¾
¾
V
1.25  
V
V
R = 75V  
2.5  
50  
30  
25  
mA  
mA  
mA  
nA  
R = 75V, Tj = 150°C  
IR  
VR = 25V, Tj = 150°C  
VR = 20V  
VR = 0, f = 1.0MHz  
CT  
trr  
Total Capacitance  
¾
¾
2.0  
4.0  
pF  
ns  
IF = IR = 10mA,  
Irr = 0.1 x IR, RL = 100W  
Reverse Recovery Time  
Notes:  
1. Device mounted on FR-4 PC board with recommended pad layout, which can be found on our website at  
http://www.diodes.com/datasheets/ap02001.pdf.  
2. Short duration test pulse used to minimize self-heating effect.  
DS30045 Rev. 2 - 2  
1 of 3  
BAV99W  
www.diodes.com  

BAV99W-7 替代型号

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