5秒后页面跳转
BAV99WT1 PDF预览

BAV99WT1

更新时间: 2024-02-11 19:02:33
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 整流二极管开关
页数 文件大小 规格书
6页 131K
描述
SC-70/SOT-323 Dual Series Switching Diode

BAV99WT1 技术参数

是否无铅: 含铅生命周期:Active
零件包装代码:SC-70包装说明:SOT-323, 3 PIN
针数:3Reach Compliance Code:unknown
风险等级:5.75配置:SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:NOT SPECIFIED元件数量:2
端子数量:3最大输出电流:0.2 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
最大功率耗散:0.27 W认证状态:COMMERCIAL
最大重复峰值反向电压:70 V最大反向恢复时间:0.006 µs
表面贴装:YES端子面层:MATTE TIN
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40Base Number Matches:1

BAV99WT1 数据手册

 浏览型号BAV99WT1的Datasheet PDF文件第2页浏览型号BAV99WT1的Datasheet PDF文件第3页浏览型号BAV99WT1的Datasheet PDF文件第4页浏览型号BAV99WT1的Datasheet PDF文件第5页浏览型号BAV99WT1的Datasheet PDF文件第6页 
Order this document  
by BAV99WT1/D  
SEMICONDUCTOR TECHNICAL DATA  
Motorola Preferred Devices  
The BAV99WT1 is a smaller package, equivalent to the BAV99LT1.  
Suggested Applications  
3
ESD Protection  
1
Polarity Reversal Protection  
Data Line Protection  
Inductive Load Protection  
Steering Logic  
2
ANODE  
1
CATHODE  
2
3
MAXIMUM RATINGS (EACH DIODE)  
Rating  
CATHODE/ANODE  
Symbol  
Value  
70  
Unit  
Vdc  
mAdc  
mAdc  
V
BAV99WT1  
CASE 419–02, STYLE 9  
SC–70/SOT–323  
Reverse Voltage  
V
R
Forward Current  
I
F
215  
500  
70  
Peak Forward Surge Current  
Repetitive Peak Reverse Voltage  
I
FM(surge)  
CATHODE  
ANODE  
2
V
RRM  
1
(1)  
Average Rectified Forward Current  
I
715  
mA  
F(AV)  
(averaged over any 20 ms period)  
Repetitive Peak Forward Current  
Non–Repetitive Peak Forward Current  
3
I
450  
mA  
A
CATHODE/ANODE  
FRM  
I
BAV99RWT1  
CASE 419–02, STYLE 10  
SC–70/SOT–323  
FSM  
t = 1.0  
s
2.0  
1.0  
0.5  
t = 1.0 ms  
t = 1.0 S  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Total Device Dissipation  
(1)  
T = 25°C  
A
P
200  
mW  
D
FR–5 Board,  
Derate above 25°C  
1.6  
625  
300  
mW/°C  
°C/W  
mW  
Thermal Resistance Junction to Ambient  
Total Device Dissipation  
R
JA  
D
P
(2)  
Alumina Substrate,  
T
A
= 25°C  
Derate above 25°C  
2.4  
mW/°C  
°C/W  
Thermal Resistance Junction to Ambient  
Junction and Storage Temperature  
R
417  
JA  
T , T  
J stg  
65 to +150  
°C  
1. FR–5 = 1.0  
0.75  
0.062 in.  
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.  
DEVICE MARKING  
BAV99WT1 = A7  
BAV99RWT1 = F7  
Thermal Clad is a trademark of the Bergquist Company.  
Preferred devices are Motorola recommended choices for future use and best overall value.  
Motorola, Inc. 1996

与BAV99WT1相关器件

型号 品牌 获取价格 描述 数据表
BAV99W-T1 WTE

获取价格

SURFACE MOUNT FAST SWITCHING DIODE
BAV99W-T1 SENSITRON

获取价格

Rectifier Diode, 2 Element, 0.15A, 75V V(RRM), Silicon, PLASTIC PACKAGE-3
BAV99WT1/D ETC

获取价格

SC-70/SOT-323 Dual Series Switching Diodes
BAV99WT1G ONSEMI

获取价格

Dual Series Switching Diodes
BAV99WT1G FAIRCHILD

获取价格

Small Signal Diode
BAV99W-T1-LF WTE

获取价格

暂无描述
BAV99WT3 MOTOROLA

获取价格

0.715A, 70V, 2 ELEMENT, SILICON, SIGNAL DIODE, CASE 419-02, SC-70, 3 PIN
BAV99WT3 ONSEMI

获取价格

0.215A, 70V, 2 ELEMENT, SILICON, SIGNAL DIODE, 419-02, SC-70, 3 PIN
BAV99W-T3 WTE

获取价格

SURFACE MOUNT FAST SWITCHING DIODE
BAV99WT3G ONSEMI

获取价格

100 V 开关二极管,双,串联