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BAV99WT-TP PDF预览

BAV99WT-TP

更新时间: 2024-02-01 02:54:56
品牌 Logo 应用领域
美微科 - MCC 光电二极管
页数 文件大小 规格书
3页 219K
描述
Rectifier Diode, 2 Element, 0.15A, 75V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-3

BAV99WT-TP 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:ROHS COMPLIANT, PLASTIC PACKAGE-3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.70
风险等级:0.57配置:SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.715 VJESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:2 A元件数量:2
端子数量:3最高工作温度:150 °C
最大输出电流:0.15 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260最大功率耗散:0.2 W
认证状态:Not Qualified最大重复峰值反向电压:75 V
最大反向恢复时间:0.004 µs子类别:Rectifier Diodes
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:10Base Number Matches:1

BAV99WT-TP 数据手册

 浏览型号BAV99WT-TP的Datasheet PDF文件第2页浏览型号BAV99WT-TP的Datasheet PDF文件第3页 
M C C  
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20736 Marilla Street Chatsworth  
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ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
Micro Commercial Components  
BAV99WT  
Features  
·
Low Current Leakage  
Low Cost  
Small Outline Surface Mount Package  
200mW 75Volt  
Plastic-Encapsulate  
Diode  
Halogen free available upon request by adding suffix "-HF"  
Lead Free Finish/Rohs Compliant ("P"Suffix designates  
RoHS Compliant. See ordering information)  
·
·
Epoxy meets UL 94 V-0 flammability rating  
C/A  
Moisture Sensitivity Level 1  
Pin Configuration  
Top View  
KJG  
SOT-323  
A
A
C
D
Maximum Ratings  
Operating Temperature: -55°C to +150°C  
Storage Temperature: -55°C to +150°C  
C
B
°
Typical Thermal Resistance: 625 C/W Junction to Ambient  
F
E
Electrical Characteristics @ 25°C Unless Otherwise Specified  
Reverse Voltage  
VR  
75V  
Average Rectified  
Output Current  
IO  
150mA  
H
G
J
K
2A  
1A  
Non-Repetitive Peak  
Forward Surge Current  
@1us  
@1s  
IFSM  
DIMENSIONS  
INCHES  
MM  
Power Dissipation  
PTOT  
200mW  
DIM  
A
B
C
D
E
MIN  
.071  
.045  
.083  
.026 Nominal  
.047  
.012  
.000  
.035  
.004  
.006  
MAX  
.087  
.053  
.096  
MIN  
1.80  
1.15  
2.10  
MAX  
2.20  
1.35  
2.45  
NOTE  
715mV  
855mV IFM = 10mA;  
1000mV IFM = 50mA;  
1250mV IFM = 150mA;  
I
FM = 1mA;  
Maximum  
Instantaneous  
Forward Voltage  
VF  
0.65Nominal  
1.20  
.055  
.016  
.004  
.039  
.010  
.016  
1.40  
.40  
.100  
1.00  
.250  
.40  
F
.30  
.000  
.90  
.100  
.15  
G
H
J
Maximum DC  
Reverse Current At  
Rated DC Blocking  
Voltage  
Typical Junction  
Capacitance  
Reverse Recovery  
Time  
VR=75Volts  
TJ = 25°C  
K
IR  
2.5µA  
Suggested Solder  
Pad Layout  
0.70  
CJ  
Trr  
2.0pF  
4nS  
Measured at  
1.0MHz, VR=0V  
IF=10mA  
VR = 0V  
RL=100Ω  
0.90  
1.90  
*Pulse test: Pulse width 300 µsec, Duty cycle 2%  
0.65  
0.65  
www.mccsemi.com  
1 of 3  
Revision: D  
2013/09/24  

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