Datasheet > BAV99S.115

BAV99S.115

更新时间： 2022-05-21 17:06:38

品牌	Logo	应用领域
恩智浦 - NXP		二极管开关
页数	文件大小	规格书
14页	372K
描述
High-speed switching diodes

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数据手册

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BAV99S.115 数据手册

BAV99 series

High-speed switching diodes

Rev. 8 — 18 November 2010

Product data sheet

1. Product profile

1.1 General description

High-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD)

plastic packages.

Table 1.

Product overview

Type number

Package

NXP

Configuration

Package

configuration

JEITA

JEDEC

TO-236AB dual series

BAV99

SOT23

SOT363

SOT323

small

BAV99S

BAV99W

SC-88

SC-70

quadruple; 2 series

dual series

very small

1.2 Features and benefits

High switching speed: t_rr≤ 4 ns

Low leakage current

Low capacitance: C_d≤ 1.5 pF

Reverse voltage: V_R≤ 100 V

AEC-Q101 qualified

Small SMD plastic packages

1.3 Applications

High-speed switching

Reverse polarity protection

General-purpose switching

1.4 Quick reference data

Table 2.

Symbol

Per diode

I_R

Quick reference data

Parameter

Conditions

Min

Typ

Max

Unit

reverse current

V_R= 80 V

0.5

100

μA

V_R

reverse voltage

[1]

t_rr

reverse recovery time

[1] When switched from I_F= 10 mA to I_R= 10 mA; R_L= 100 Ω; measured at I_R= 1 mA.

12 3 4 5 6 7...14

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