Datasheet > BAV99_10

BAV99_10

更新时间： 2024-11-09 08:49:03

品牌	Logo	应用领域
美台 - DIODES		二极管开关
页数	文件大小	规格书
4页	80K
描述
DUAL SURFACE MOUNT SWITCHING DIODE

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

BAV99_10 数据手册

BAV99

DUAL SURFACE MOUNT SWITCHING DIODE

Please click here to visit our online spice models database.

Features

Mechanical Data

•

Fast Switching Speed

•

Case: SOT-23

Surface Mount Package Ideally Suited for Automated Insertion

For General Purpose Switching Applications

High Conductance

Lead Free/RoHS Compliant (Note 3)

"Green" Device (Note 4)

Case Material: Molded Plastic, “Green” Molding Compound

(Note 4). UL Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020

Terminals: Matte Tin Finish annealed over Alloy 42 leadframe

(Lead Free Plating). Solderable per MIL-STD-202, Method 208

Polarity: See Diagram

Marking Information: See Page 2

Ordering Information: See Page 2

Weight: 0.008 grams (approximate)

•

Qualified to AEC-Q101 Standards for High Reliability

SOT-23

TOP VIEW

Internal Schematic

Maximum Ratings @T = 25°C unless otherwise specified

Characteristic

Non-Repetitive Peak Reverse Voltage

Symbol

V_RM

Value

100

Unit

V_RRM

V_RWM

V_R

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

RMS Reverse Voltage

V_R(RMS)

I_FM

Forward Continuous Current (Note 1)

300

2.0

1.0

Non-Repetitive Peak Forward Surge Current

@ t = 1.0μs

@ t = 1.0s

I_FSM

Thermal Characteristics

Characteristic

Power Dissipation (Note 1)

Symbol

P_D

Value

350

Unit

Thermal Resistance Junction to Ambient Air (Note 1)

Operating and Storage Temperature Range

357

°C/W

°C

R_θ

-65 to +150

T_J, T_STG

Electrical Characteristics @T = 25°C unless otherwise specified

Characteristic

Reverse Breakdown Voltage (Note 2)

Symbol

Min

Max

⎯

Unit

Test Condition

V_(BR)R

I_R= 2.5μA

I_F= 1.0mA

I_F= 10mA

I_F= 50mA

I_F= 150mA

V_R= 75V

0.715

0.855

1.0

Forward Voltage

V_F

⎯

1.25

μA

2.5

V_R= 75V, T_J= 150°C

Reverse Current (Note 2)

I_R

_R= 25V, T_J= 150°C

V_R= 20V

Total Capacitance

2.0

4.0

C_T

t_rr

⎯

V_R= 0, f = 1.0MHz

I_F= I_R= 10mA,

I_rr= 0.1 x I_R, R_L= 100Ω

Reverse Recovery Time

Notes:

1. Part mounted on Polymide PC board with pad dimensions 1.13mm x 1.27mm.

2. Short duration pulse test used to minimize self-heating effect.

3. No purposefully added lead.

4. Product manufactured with Data Code 9W (week 39, 2009) and newer are built with Green Molding Compound. Product manufactured prior to Date

Code 9W are built with Non-Green Molding Compound and may contain Halogens or Sb₂O₃Fire Retardants.

1 of 4

www.diodes.com

April 2010

BAV99

Document number: DS12007 Rev. 20 - 2

12 3 4

中文翻译

下载PDF

与BAV99_10相关器件

型号	品牌	获取价格	描述	数据表
BAV99_11	FAIRCHILD	获取价格	Small Signal Diode
BAV99_11	MCC	获取价格	350mW 70Volt Dual Series Switching Diode
BAV99_12	SECOS	获取价格	0.215A , 70V Surface Mount Switching Diode
BAV99_13	MCC	获取价格	350mW 70Volt Dual Series Switching Diode
BAV99_15	DIODES	获取价格	DUAL SURFACE MOUNT SWITCHING DIODE
BAV99_15	UTC	获取价格	HIGH CONDUCTANCE ULTRA FAST DIODE
BAV99_18	DIODES	获取价格	DUAL SURFACE MOUNT SWITCHING DIODE
BAV99_D87Z	FAIRCHILD	获取价格	Rectifier Diode, 2 Element, 0.2A, 70V V(RRM), Silicon, SOT-23, 3 PIN
BAV99_D87Z	ONSEMI	获取价格	Rectifier Diode, 2 Element, 0.2A, 70V V(RRM), Silicon
BAV99_NL	FAIRCHILD	获取价格	Rectifier Diode, 2 Element, 0.2A, 70V V(RRM), Silicon, SOT-23, 3 PIN

与BAV99_10相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

22
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

21
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

47
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

39

产品中心

服务支持

精选活动

关于我们

帮助中心

BAV99_10

BAV99_10 数据手册

与BAV99_10相关器件

与BAV99_10相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

BAV99_10

BAV99_10 数据手册

与BAV99_10相关器件

与BAV99_10相关文章

您还可以找

您在本页遇到什么问题？