Datasheet > BAV74_04

BAV74_04

更新时间： 2024-11-21 04:08:51

品牌	Logo	应用领域
恩智浦 - NXP		二极管
页数	文件大小	规格书
3页	190K
描述
High-speed double diode

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BAV74_04 数据手册

BL Galaxy Electrical

Production specification

Dual surface mount switching diode

BAV74

FEATURES

Lead-free

For high-speed switching appilication.

Common cathode.

APPLICATIONS

Small signal switching

SOT-23

ORDERING INFORMATION

Type No.

BAV74

Marking

Package Code

SOT-23

MAXIMUM RATING @ Ta=25℃ unless otherwise specified

Parameter

Symbol

Limits

Unit

Diode reverse voltage

V_R

Peak Reverse Voltage

V_RM

I_F

Forward Current

200

Surge forward current, t=1μs

Total Power Dissipation T_s=35℃

Junction temperature

I_FS

4.5

P_tot

T_j

250

℃

150

Storage temperature range

T_stg

-65-+150

℃

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Parameter

Symbol

Test

conditions

MIN

MAX

UNIT

Reverse breakdown voltage

V_(BR)R

I_R= 100μA

V_R=50V

0.1

Reverse voltage leakage current

Forward voltage

I_R

μA

V_R=50V T_A=150℃

100

V_F

C_D

I_F=100mA

Diode capacitance

V_R=0V

f=1MHz

2.0

I_F=I_R=10mA

Reverse recovery time

t _rr

I_R=1mA R_L=100Ω

Document number: BL/SSSDC036

Rev.A

www.galaxycn.com

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