Datasheet > BAV70UE6327XT

BAV70UE6327XT

更新时间： 2024-02-10 10:42:15

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
12页	152K
描述
Rectifier Diode, 4 Element, 0.2A, 85V V(RRM), Silicon, ROHS COMPLIANT, SC-74, 6 PIN

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BAV70UE6327XT 数据手册

BAV70...

Electrical Characteristics at T = 25°C, unless otherwise specified

Parameter

Symbol

Values

Unit

min.

typ. max.

DC Characteristics

Breakdown voltage

(BR)

= 100 µA

(BR)

Reverse current

V = 70 V

µA

0.15

V = 25 V, T = 150 °C

V = 70 V, T = 150 °C

Forward voltage

I = 1 mA

715

855

I = 10 mA

I = 50 mA

1000

1200

1250

I = 100 mA

I = 150 mA

AC Characteristics

1.5 pF

Diode capacitance

V = 0 V, f = 1 MHz

Reverse recovery time

I = 10 mA, I = 10 mA, measured at I = 1mA ,

R = 100 Ω

Test circuit for reverse recovery time

D.U.T.

Pulse generator: t = 100ns, D = 0.05, t = 0.6ns,

R = 50Ω

Oscillograph

Ι_F

Oscillograph: R = 50Ω, t = 0.35ns, C = 0.05pF

EHN00019

2007-09-19

1 234 5 6 7...12

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