BAV300

更新时间： 2024-11-23 22:39:27

品牌	Logo	应用领域
威世 - VISHAY		二极管
页数	文件大小	规格书
5页	63K
描述
Silicon Epitaxial Planar Diodes

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中文翻译

获取价格

数据手册

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BAV300 数据手册

BAV300...BAV303

Vishay Telefunken

Silicon Epitaxial Planar Diodes

Features

Saving space

Hermetic sealed parts

Fits onto SOD 323 / SOT 23 footprints

Electrical data identical with the devices

BAV100...BAV103 / BAV200...BAV203

96 12315

Applications

General purposes

Absolute Maximum Ratings

T = 25 C

Parameter

Peak reverse voltage

Test Conditions

Type

Symbol

Value

120

200

250

100

150

200

Unit

BAV300

BAV301

BAV302

BAV303

BAV300

BAV301

BAV302

BAV303

RRM

Reverse voltage

Forward current

250

625

175

Peak forward surge current

Forward peak current

Junction temperature

Storage temperature range

t =1s, T =25 C

f=50Hz

FSM

stg

–65...+175

Maximum Thermal Resistance

T = 25 C

Parameter

Junction ambient

Test Conditions

mounted on epoxy–glass hard tissue, Fig. 1

Symbol

thJA

Value

500

Unit

K/W

35 m copper clad, 0.9 mm copper area per

electrode

Document Number 85545

Rev. 3, 01-Apr-99

www.vishay.de • FaxBack +1-408-970-5600

1 (5)

12 3 4 5

中文翻译

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