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BAV300P PDF预览

BAV300P

更新时间: 2024-11-06 03:22:51
品牌 Logo 应用领域
美微科 - MCC /
页数 文件大小 规格书
3页 636K
描述
DIODE 0.25 A, 60 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, MICROMELF-2, Signal Diode

BAV300P 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:MELF
包装说明:HERMETIC SEALED, MICROMELF-2针数:2
Reach Compliance Code:unknown风险等级:5.55

BAV300P 数据手册

 浏览型号BAV300P的Datasheet PDF文件第2页浏览型号BAV300P的Datasheet PDF文件第3页 
M C C  
BAV300  
THRU  
BAV303  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
Micro Commercial Components  
Features  
Saving Space  
Silicon Epitaxial Planar Diodes  
Hermetic Sealed Parts  
Fits onto SOD-323/SOT-23 footprints  
Switching Diodes  
Electrical data identical with the devices BAV100…BAV103  
Maximum Ratings  
MICROMELF  
Continuous Reverse  
Voltage  
BAV300  
BAV301  
BAV302  
BAV303  
50V  
TA=25  
TA=25℃  
100V  
150V  
200V  
VR  
Cathode Mark  
Repetitive Peak Reverse  
Voltage  
BAV300  
60V  
BAV301  
BAV302  
BAV303  
120V  
200V  
250V  
VRRM  
C
TA=25℃  
Forward DC Current  
250mA  
625mA  
1.0A  
IF  
Repetitive Peak Forward  
Current  
f=50Hz, TA=25℃  
TP=1s, Tj=25℃  
Note (1)  
IFRM  
IFSM  
RthJA  
B
Surge Forward Current  
Thermal Resistance  
Junction to Ambient  
A
500K/W  
175℃  
Junction temperature  
Tj  
-65 to + 175℃  
Storage temperature Range  
Tstg  
Note: (1) mounted on epoxy-glass hard tissue, Fig.4 35μm copper clad, 0.9 mm2  
copper area per electrode  
DIMENSIONS  
Electrical Characteristics @ 25°C Unless Otherwise Specified  
INCHES  
MIN  
MM  
Maximum Forward Voltage  
DIM  
A
MAX  
.079  
.008  
.051  
MIN  
1.8  
MAX  
2.0  
NOTE  
IF = 100mA ,TA=25℃  
VF  
1.00V  
.071  
.004  
.047  
B
C
.10  
1.20  
.20  
1.30  
Maximum Leakage current  
BAV300  
100nA  
15μA  
100nA  
15μA  
100nA  
15μA  
100nA  
15μA  
VR=50V  
VR=50V, Tj=100℃  
VR=100V  
Æ
BAV300  
BAV301  
BAV301  
BAV302  
BAV302  
BAV303  
BAV303  
VR=100V, Tj=100℃  
IR  
VR=150V  
VR=150V, Tj=100℃  
VR=200V  
SUGGESTED SOLDER  
PAD LAYOUT  
VR=200V, Tj=100℃  
0.039  
Maximum Leakage current  
BAV300  
BAV301  
BAV302  
BAV303  
60V  
120V  
200V  
250V  
IR=100μA, t  
P/T=0.01,  
tP=0.3ms  
V(BR)  
0.055”  
Diode Capacitance  
CD  
trr  
1.5pF  
50ns  
VR=0V, f=1.0MHz  
Maximum Reverse recovery  
time  
IF=10mA, IR=30mA  
Irr=3.0mA, RL=100  
0.030”  
Differential Forward  
Resistance  
rF  
5.0 Ω  
IF=10mA  
www.mccsemi.com  
Revision: 3  
2006/05/28  
1 of 3  

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