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BAT68-04WE6433 PDF预览

BAT68-04WE6433

更新时间: 2024-11-30 14:41:03
品牌 Logo 应用领域
英飞凌 - INFINEON 光电二极管
页数 文件大小 规格书
5页 154K
描述
Mixer Diode, Very High Frequency to Ultra High Frequency, Silicon,

BAT68-04WE6433 技术参数

生命周期:Active包装说明:R-PDSO-G3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.60风险等级:5.21
Is Samacsys:N配置:SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
最大二极管电容:1 pF二极管元件材料:SILICON
二极管类型:MIXER DIODE最大正向电压 (VF):0.34 V
频带:VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCYJESD-30 代码:R-PDSO-G3
JESD-609代码:e3元件数量:2
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE最大功率耗散:0.15 W
认证状态:Not Qualified最大重复峰值反向电压:8 V
子类别:Rectifier Diodes表面贴装:YES
技术:SCHOTTKY端子面层:MATTE TIN
端子形式:GULL WING端子位置:DUAL
Base Number Matches:1

BAT68-04WE6433 数据手册

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