Datasheet > BAT68-06W

BAT68-06W

更新时间： 2024-09-23 06:41:31

品牌	Logo	应用领域
科信 - KEXIN		肖特基二极管光电二极管
页数	文件大小	规格书
1页	46K
描述
Silicon Schottky Diode

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中文翻译

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数据手册

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BAT68-06W 数据手册

SMD Type

Diodes

Silicon Schottky Diode

BAT68-04W,BAT68-05W,BAT68-06W

Features

For mixer applications in VHF/UHF range

For high-speed switching application

Absolute Maximum Ratings Ta = 25

Parameter

Diode reverse voltage

Forward current

Symbol

V^R

Value

Unit

I^F

130

Ptot

T^j

150

Total power dissipation

Junction temperature

Storage temperature

Junction - soldering point(Note 1)

Note

T^S

150

Tstg

RthJS

-55 to +150

390

K/W

1.For calculation of R^thJAplease refer to Application Note Thermal Resistance

Electrical Characteristics Ta = 25

Parameter

Breakdown voltage

Symbol

V^(BR)

Conditions

I(BR) = 10

V^R= 1 V

Min

Typ

Max

Unit

0.1

1.2

340

500

Reverse current

Forward voltage

V^R= 1 V, TA = 60

I^F= 1 mA

318

390

V^F

I^F= 10 mA

340

Diode capacitance

C^T

R^F

VR = 0 , f = 1 MHz

IF = 5 mA, f = 10 KHz

Differential forward resistance

Marking

Type

BAT68-04W

84s

BAT68-05W

85s

BAT68-06W

86s

Marking

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