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BAT54T_1

更新时间： 2024-11-28 04:50:27
品牌 Logo 应用领域
美台 - DIODES 肖特基二极管
页数 文件大小 规格书
3页 355K
描述
SURFACE MOUNT SCHOTTKY BARRIER DIODE

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BAT54T_1 数据手册

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SPICE MODELS: BAT54T BAT54AT BAT54CT BAT54ST  
BAT54T /AT /CT /ST  
Lead-free  
SURFACE MOUNT SCHOTTKY BARRIER DIODE  
Features  
·
·
·
·
Ultra-Small Surface Mount Package  
A
SOT-523  
Low Forward Voltage Drop  
Fast Switching  
Dim Min Max Typ  
A
B
C
D
G
H
J
0.15 0.30 0.22  
0.75 0.85 0.80  
1.45 1.75 1.60  
PN Junction Guard Ring for Transient and  
ESD Protection  
C
B
TOP VIEW  
·
Lead Free/RoHS Compliant (Note 3)  
G
H
¾
¾
0.50  
Mechanical Data  
0.90 1.10 1.00  
1.50 1.70 1.60  
0.00 0.10 0.05  
0.60 0.80 0.75  
0.10 0.30 0.22  
0.10 0.20 0.12  
0.45 0.65 0.50  
·
Case: SOT-523  
K
M
N
·
Case Material: Molded Plastic. UL Flammability  
Classification Rating 94V-0  
J
K
L
·
·
·
Moisture sensitivity: Level 1 per J-STD-020C  
L
D
Terminals: Finish - Solderable per MIL-STD-202, Method 208  
Lead Free Plating (Matte Tin Finish annealed over Alloy 42  
leadframe).  
M
N
a
·
·
·
·
Polarity: See Diagrams Below  
0°  
8°  
¾
Marking: See Diagrams Below & Page 2  
Weight: 0.002 grams (approx.)  
Ordering Information, see Page 2  
All Dimensions in mm  
BAT54T Marking: L1  
BAT54CT Marking: L3  
BAT54AT Marking: L2  
@ TA = 25°C unless otherwise specified  
BAT54ST Marking: L4  
Maximum Ratings  
Characteristic  
Symbol  
Value  
Unit  
VRRM  
VRWM  
VR  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
30  
V
IFM  
IFRM  
IFSM  
Pd  
200  
300  
600  
150  
833  
mA  
mA  
Forward Continuous Current (Note 1)  
Repetitive Peak Forward Current  
Forward Surge Current  
mA  
@ t < 1.0s  
Power Dissipation (Note 1)  
mW  
°C/W  
°C  
R
qJA  
Thermal Resistance, Junction to Ambient (Note 1)  
Operating and Storage Temperature Range  
Tj, TSTG  
-65 to +125  
@ TA = 25°C unless otherwise specified  
Electrical Characteristics  
Characteristic  
Symbol Min  
Typ  
Max  
Unit  
Test Condition  
V(BR)R  
30  
Reverse Breakdown Voltage (Note 2)  
IR = 100mA  
¾
¾
V
IF = 0.1mA  
240  
320  
IF = 1mA  
IF = 10mA  
IF = 30mA  
IF = 100mA  
400  
mV  
Forward Voltage  
¾
¾
VF  
500  
1000  
VR = 25V  
IR  
Reverse Leakage Current (Note 2)  
Total Capacitance  
¾
¾
¾
2.0  
10  
mA  
VR = 1.0V, f = 1.0MHz  
CT  
¾
pF  
IF = 10mA through IR = 10mA  
to IR = 1.0mA, RL = 100W  
trr  
Reverse Recovery Time  
¾
¾
5.0  
ns  
Notes:  
1. Device mounted on FR-4 PC board with recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.  
2. Short duration test pulse used to minimize self-heating efffect.  
3. No purposefully added lead.  
DS30259 Rev. 8 - 2  
1 of 3  
BAT54T /AT /CT /ST  
www.diodes.com  
ã Diodes Incorporated  
123

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