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BAT54TA PDF预览

BAT54TA

更新时间: 2024-11-01 12:52:59
品牌 Logo 应用领域
美台 - DIODES 二极管
页数 文件大小 规格书
2页 113K
描述
SOT23 SILICON EPITAXIAL SCHOTTKY BARRIER DIODES

BAT54TA 数据手册

 浏览型号BAT54TA的Datasheet PDF文件第2页 
SOT23 SILICON EPITAXIAL  
BAT54 SERIES  
SCHOTTKY BARRIER DIODES  
ISSUE 1– SEPTEMBER 1995  
1
1
1
1
2
1
3
3
2
3
3
2
2
3
BAT54  
BAT54A  
BAT54S  
SERIES  
BAT54C  
Device Type  
SINGLE  
COMMON  
ANODE  
COMMON  
CATHODE  
Pin Configuration  
L4Z  
L42  
L44  
L43  
Partmarking Detail  
FEATURES: Low VF & High Current Capability  
APPLICATIONS: PSU, Mobile Telecomms & SCSI  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VALUE  
30  
UNIT  
V
Continuous Reverse Voltage  
Forward Current  
VR  
IF  
200  
mA  
mV  
mA  
mA  
mW  
°C  
Forward Voltage @ IF =10mA  
Repetitive Peak Forward Current  
Non Repetitive Forward Current t<1s  
Power Dissipation at Tamb=25°C  
Storage Temperature Range  
VF  
400  
IFRM  
IFSM  
Ptot  
Tstg  
Tj  
300  
600  
330  
-55 to +150  
125  
JunctionTemperature  
¤
°C  
ELECTRICAL CHARACTERISTICS (at T  
amb  
= 25°C unless otherwise stated).  
PARAMETER  
SYMBOL  
MIN. TYP. MAX. UNIT CONDITIONS.  
Reverse Breakdown V(BR)R  
Voltage  
30  
50  
V
IR=10µA  
Forward Voltage  
VF  
135  
200  
280  
350  
530  
240  
320  
400  
500  
mV  
mV  
mV  
mV  
IF=0.1mA  
IF=1mA  
IF=10mA  
IF=30mA  
IF=100mA  
1000 mV  
Reverse Current  
IR  
2.5  
7.5  
4
VR=25V  
µA  
pF  
ns  
Diode Capacitance  
CD  
trr  
10  
5
f=1MHz,VR=1V  
Reverse Recover  
Time  
switched from  
IF=10mA to IR=10mA  
RL=100, Measured  
at IR=1mA  
¤ Dual Device; For simultaneous continuous use Tj=100°C.  
3 - 4  

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