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BAT54T1/D PDF预览

BAT54T1/D

更新时间: 2024-10-31 23:34:31
品牌 Logo 应用领域
其他 - ETC 二极管
页数 文件大小 规格书
8页 56K
描述
Schottky Barrier Diodes

BAT54T1/D 数据手册

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BAT54T1  
Preferred Device  
Schottky Barrier Diodes  
These Schottky barrier diodes are designed for high speed switching  
applications, circuit protection, and voltage clamping. Extremely low  
forward voltage reduces conduction loss. Miniature surface mount  
package is excellent for hand held and portable applications where  
space is limited.  
http://onsemi.com  
Extremely Fast Switching Speed  
Low Forward Voltage – 0.35 Volts (Typ) @ I = 10 mAdc  
30 VOLT  
SCHOTTKY BARRIER  
DETECTOR AND SWITCHING  
DIODES  
F
1
2
CATHODE  
ANODE  
MARKING  
DIAGRAM  
BU  
2
1
2
1
SOD–123  
CASE 425  
STYLE 1  
MAXIMUM RATINGS (T = 125°C unless otherwise noted)  
J
Rating  
Symbol  
Value  
Unit  
Reverse Voltage  
V
R
30  
Volts  
ORDERING INFORMATION  
Forward Power Dissipation, FR–5 Board  
(Note 1.)  
P
F
Device  
Package  
Shipping  
@ T = 25°C  
Derate above 25°C  
400  
3.2  
mW  
mW/°C  
A
BAT54T1  
SOD–123  
3000/Tape & Reel  
Thermal Resistance, Junction to Case  
Thermal Resistance, Junction to Ambient  
Forward Current (DC)  
R
174  
492  
°C/W  
°C/W  
mA  
θ
JL  
Preferred devices are recommended choices for future use  
and best overall value.  
R
θ
JA  
I
200 Max  
600  
F
Non–Repetitive Peak Forward Current  
I
mA  
FSM  
t < 10 msec  
p
Repetitive Peak Forward Current  
I
300  
mA  
FRM  
Pulse Wave = 1 sec, Duty Cycle = 66%  
Junction Temperature  
T
125 Max  
°C  
°C  
J
Storage Temperature Range  
T
stg  
–55 to +150  
1. FR-5 = 1.0 x 0.75 x 0.062 in.  
Semiconductor Components Industries, LLC, 2000  
Publication Order Number:  
November, 2000 – Rev. 6  
BAT54T1/D  

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