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BAT54SWT3 PDF预览

BAT54SWT3

更新时间: 2024-02-02 06:03:59
品牌 Logo 应用领域
安森美 - ONSEMI 光电二极管
页数 文件大小 规格书
4页 94K
描述
2 ELEMENT, SILICON, SIGNAL DIODE, SC-70, 3 PIN

BAT54SWT3 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:SC-70
包装说明:R-PDSO-G3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.02配置:SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:R-PDSO-G3JESD-609代码:e0
元件数量:2端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):240
最大功率耗散:0.2 W认证状态:Not Qualified
最大反向恢复时间:0.005 µs表面贴装:YES
技术:SCHOTTKY端子面层:TIN LEAD
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:30Base Number Matches:1

BAT54SWT3 数据手册

 浏览型号BAT54SWT3的Datasheet PDF文件第2页浏览型号BAT54SWT3的Datasheet PDF文件第3页浏览型号BAT54SWT3的Datasheet PDF文件第4页 
BAT54T1G  
Schottky Barrier Diodes  
These Schottky barrier diodes are designed for high speed switching  
applications, circuit protection, and voltage clamping. Extremely low  
forward voltage reduces conduction loss. Miniature surface mount  
package is excellent for hand held and portable applications where  
space is limited.  
http://onsemi.com  
Features  
Extremely Fast Switching Speed  
30 VOLT  
SCHOTTKY BARRIER  
DETECTOR AND SWITCHING  
DIODES  
Low Forward Voltage 0.35 Volts (Typ) @ I = 10 mAdc  
F
These Devices are PbFree, Halogen Free/BFR Free and are RoHS  
Compliant  
1
2
CATHODE  
ANODE  
MAXIMUM RATINGS (T = 125°C unless otherwise noted)  
J
Rating  
Symbol  
Value  
Unit  
Reverse Voltage  
V
R
30  
V
SOD123  
CASE 425  
STYLE 1  
Forward Power Dissipation, FR5 Board  
P
F
2
(Note 1)  
@ T = 25°C  
A
400  
3.2  
mW  
mW/°C  
1
Derate above 25°C  
Thermal Resistance,  
JunctiontoCase  
R
174  
°C/W  
JL  
MARKING DIAGRAM  
Thermal Resistance,  
JunctiontoAmbient  
R
492  
°C/W  
JA  
SBM G  
1
G
Forward Current (DC)  
I
200 Max  
600  
mA  
mA  
F
NonRepetitive Peak Forward Current  
I
FSM  
t < 10 msec  
p
SB  
= Device Code  
= Date Code  
M
G
Repetitive Peak Forward Current  
Pulse Wave = 1 sec, Duty Cycle = 66%  
I
300  
mA  
FRM  
= PbFree Package  
(Note: Microdot may be in either location)  
Junction Temperature  
T
55 to 125  
°C  
°C  
J
Storage Temperature Range  
T
55 to +150  
stg  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. FR-5 = 1.0 x 0.75 x 0.062 in.  
ORDERING INFORMATION  
Device  
Package  
Shipping  
BAT54T1G  
SOD123  
(PbFree)  
3000 / Tape & Reel  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
© Semiconductor Components Industries, LLC, 2010  
1
Publication Order Number:  
August, 2010 Rev. 9  
BAT54T1/D  
 

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