Datasheet > BAT54T

BAT54T

更新时间： 2024-09-27 18:04:51

品牌	Logo	应用领域
RECTRON		/
页数	文件大小	规格书
4页	1107K
描述
Reverse Voltage Vr : 30 V;Forward Current Io : 0.2 A;Forward Voltage Vf : 1.0 V;Reverse Current Ir : 2 uA;Recovery Time : N/A;Package / Case : SOT-523;Mounting Style : SMD/SMT;Certified (AEC-Q101...etc) : AEC-Q101

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数据手册

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BAT54T 数据手册

BAT54T

(AT)(CT)(ST）

Schottky Barrier Diode

Features

SOT-523

Uni t: mm

Ultra-small surface mount package

+0.1

- 0.1

1.6

+0. 1

1.0

- 0. 1

Low forward voltage drop

+0.05

-0.05

0.2

0.15±0.05

Fast switching

PN junction guard ring for transient and ESD protection

Available in lead free version

P/N suffix V means AEC-1Q01 quqalified, e.g:BAT54TV

Halogen-free

0.3±0.05

Pin Configuration - Top View

+0. 1

-0. 1

0.5

BAT54T

BAT54CT

BAT54ST

BAT54AT

Marking

Type

BAT54T

BAT54AT

BAT54CT

BAT54ST

Marking

Absolute Maxim um Ratings Ta = 25

Param eter

Non-Repetitive Peak reverse voltage

DC Blocking Voltage

Sym bol

V^RM

V^R

Lim its

Unit

Average Rectified Output Current

Power Dissipation

I^o

200

150

m A

P^d

m W

Junction Tem perature

T^J

150

Storage Tem perature range

T^STG

-65 to +150

Electrical Characteristics Ta = 25

Parameter

Symbol

V^(BR)

I^R

Conditions

Min

Max

Unit

Reverse breakdown voltage

Reverse voltage leakage current

I^R= 100

V^R=25V

240

320

400

500

1000

I^F= 0.1 mA

I^F= 1 mA

Forward voltage

V^F

I^F= 10 mA

I^F= 30 mA

I^F= 100 mA

V^R= 1V,f=1MHz

Total capacitance

C^T

t^rr

Reverse recovery time

I^F= 10mA, I^R= 10mA 1mA,R^L=100

2019-09/08

REV:O

12 3 4

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