Datasheet > BAT54SWT-TP-HF

BAT54SWT-TP-HF

更新时间： 2024-02-19 08:05:50

品牌	Logo	应用领域
美微科 - MCC		二极管
页数	文件大小	规格书
3页	228K
描述
Rectifier Diode,

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中文翻译

获取价格

技术参数
数据手册

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BAT54SWT-TP-HF 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	ECCN代码：	EAR99
风险等级：	5.02	二极管类型：	RECTIFIER DIODE
湿度敏感等级：	1	峰值回流温度（摄氏度）：	260
处于峰值回流温度下的最长时间：	10	Base Number Matches：	1

BAT54SWT-TP-HF 数据手册

BAT54WT

thru

M C C

Micro Commercial Components

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

20736 Marilla Street Chatsworth

ꢆꢋꢅꢌꢍꢎꢍꢍ

ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

BAT54SWT

Features

Epoxy meets UL 94 V-0 flammability rating

Moisture Sensitivity Level 1

•

Low Forward Voltage

200mWatt, 30Volt

Surface Mount SOT-323 Package

Capable of 200mWatts of Power Dissipation

Lead Free Finish/Rohs Compliant ("P"Suffix designates

Schottky Barrier Diode

RoHS Compliant. See ordering information)

Halogen free available upon request by adding suffix "-HF"

•

SOT-323

Device

Marking

Part

Number

Type

Configuration

BAT54WT

KL5

KL6

KL7

KL8

Single

Dual

Figure 1

Figure 2

Figure 3

Figure 4

BAT54AWT

BAT54CWT

BAT54SWT

Maximum Ratings

Continuous Reverse Voltage

Forward Current

V_R

30V

200mA

300mA

600mA

I^F

Repetitive Peak Forward Current

I_FRM

I_FSM

P_D

Non-Repetitive Peak Forward Current t<1s

Total Power Dissipation @ T_A= 25°C

Storage Temperature Range

DIMENSIONS

INCHES

200mW

T_stg

-55°C to 125°C

DIM

MIN

.071

.045

.083

MAX

.087

.053

.096

MIN

1.80

1.15

2.10

MAX

2.20

1.35

2.45

NOTE

Junction Temperature

T_j

Electrical Characteristics @ 25 °C Unless Otherwise Specified

.026 Nominal

0.65Nominal

.047

.055

.016

.004

.039

.010

.016

1.20

1.40

.40

Ratings

Forward Voltage at

I_F= 0.1mA

Symbol

Max.

Notes

.012

.000

.035

.004

.006

.30

.000

.90

.100

1.00

.250

.40

240mV

320mV

400mV

500mV

1000mV

2 uA

.100

.15

I_F= 1mA

I_F= 10mA

V_F

Suggested Solder

Pad Layout

0.70

I_F= 30mA

I_F= 100mA

Reverse Current

Reverse Breakdown

Voltage

I_R

V_(BR)

V_R= 25V

>30V

0.90

1.90

Capacitance

C_J

t_rr

10pF

5nS

Measured at

1.0MHz, V_R=1.0V

I_F=I_R=10mA;

I_(REC)= 1mA

Reverse Recovery

Time

0.65

Thermal Resistance,

Junction to Ambient

R_θJA

500K/W

0.65

www.mccsemi.com

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Revision: D

2013/09/24

12 3

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