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BAT54S-G PDF预览

BAT54S-G

更新时间: 2024-11-28 04:50:27
品牌 Logo 应用领域
上华 - COMCHIP 整流二极管肖特基二极管测试光电二极管快速恢复二极管
页数 文件大小 规格书
2页 64K
描述
Surface Mount Schottky Diode

BAT54S-G 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:R-PDSO-G3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.70
风险等级:5.75Is Samacsys:N
应用:FAST RECOVERY最小击穿电压:30 V
配置:SERIES CONNECTED, CENTER TAP, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1 V
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
最大非重复峰值正向电流:0.6 A元件数量:2
相数:1端子数量:3
最高工作温度:125 °C最大输出电流:0.2 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE最大功率耗散:0.225 W
最大重复峰值反向电压:30 V最大反向电流:2000 µA
最大反向恢复时间:0.005 µs反向测试电压:25 V
表面贴装:YES技术:SCHOTTKY
端子面层:Tin (Sn)端子形式:GULL WING
端子位置:DUALBase Number Matches:1

BAT54S-G 数据手册

 浏览型号BAT54S-G的Datasheet PDF文件第2页 
SSuurrffaaccee Mount SScchhoottttkkyy DDiiooddee  
COMCHIP  
www.comchip.com.tw  
Voltage: 30 Volts  
Current: 200mA  
Series -G  
BAT54  
Features  
Low Turn-onVoltage  
Fast Switching  
PN Junction GuardRing for Transient and  
ESD Protection  
SOT-23  
.119 (3.0)  
.110 (2.8)  
Mechanical data  
Case: SOT-23, Molded Plastic  
Terminals:Solderable per MIL-STD-202, Method 208  
Polarity: See DiagramsBelow  
Weight: 0.008 grams (approx.)  
Mounting Position:Any  
.020 (0.5)  
Top View  
3
BAT54A-G  
BAT54-G  
2
1
CATHODE  
1
3
1
3
.037(0.95)  
.037(0.95)  
CATHODE  
ANODE  
ANODE  
2
CATHODE  
ANODE  
ANODE  
CATHODE  
CATHODE  
3
1
1
.103 (2.6)  
.086 (2.2)  
3
.020 (0.5) .020 (0.5)  
2
2
ANODE  
CATHODE  
ANODE  
CATHODE  
Dimensions in inches (millimeters)  
BAT54C-G  
BAT54S-G  
Maximum Ratings (TA = 125°C unless otherwise noted)  
Rating  
Symbol  
Value  
30  
Units  
Reverse Voltage  
Forward Power Dissipation @ TA = 25°C  
Derate above 25°C  
VR  
Volts  
mW  
225  
PF  
1.8  
200 Max  
125 Max  
mW/°C  
mA  
IF  
TJ  
Forward Current (DC)  
Junction Temperature  
°C  
°C  
Tstg  
-55 to +150  
Storage Temperature Range  
Electrical Characterics (TA = 25°C unless otherwise noted) (EACH DIODE)  
Parameter  
Symbol  
Min  
Typ  
Max  
Unit  
Volts  
V(BR)R  
Reverse Breakdown Voltage (IR = 10 mA)  
30  
CT  
IR  
Total Capacitance (VR = 1.0 V, f = 1.0 MHz)  
7.60  
10.0  
pF  
mAdc  
Reverse Leakage (VR = 25 V)  
Forward Voltage (IF = 0.1 mAdc)  
(IF = 30 mAdc)  
(IF = 100 mAdc)  
Reverse Recovery Time  
(IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc) Figure 1  
Forward Voltage (IF = 1.0 mAdc)  
(IF = 10 mAdc)  
Forward Current (DC)  
Repetitive Peak Forward Current  
0.50  
0.22  
0.41  
0.52  
2.0  
0.24  
0.5  
VF  
Vdc  
1.0  
trr  
5.0  
ns  
0.29  
0.35  
0.32  
0.40  
200  
300  
600  
VF  
Vdc  
IF  
IFRM  
IFSM  
mAdc  
mAdc  
mAdc  
Non–Repetitive Peak Forward Current (t < 1.0 s)  
-Gsuffix designates RoHS compliant Version  
Page 1  

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