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BAT54S-TP PDF预览

BAT54S-TP

更新时间: 2024-11-28 12:52:47
品牌 Logo 应用领域
美微科 - MCC 整流二极管肖特基二极管光电二极管
页数 文件大小 规格书
3页 257K
描述
200mWatt, 30Volt Schottky Barrier Diode

BAT54S-TP 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:LEAD FREE, PLASTIC PACKSGE-3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.70
风险等级:0.69Is Samacsys:N
配置:SERIES CONNECTED, CENTER TAP, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.24 V
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:0.6 A
元件数量:2端子数量:3
最高工作温度:125 °C最低工作温度:-55 °C
最大输出电流:0.2 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260最大功率耗散:0.2 W
认证状态:Not Qualified最大重复峰值反向电压:30 V
最大反向恢复时间:0.005 µs子类别:Rectifier Diodes
表面贴装:YES技术:SCHOTTKY
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:10
Base Number Matches:1

BAT54S-TP 数据手册

 浏览型号BAT54S-TP的Datasheet PDF文件第2页浏览型号BAT54S-TP的Datasheet PDF文件第3页 
M C C  
Micro Commercial Components  
BAT54  
THRU  
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20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
BAT54S  
Features  
·
Lead Free Finish/Rohs Compliant ("P"Suffix designates  
RoHS Compliant. See ordering information)  
Low Forward Voltage  
·
200mWatt, 30Volt  
Schottky Barrier Diode  
Surface Mount device  
Epoxy meets UL 94 V-0 flammability rating  
·
Moisture Sensitivity Level 1  
Halogen free available upon request by adding suffix "-HF"  
MCC Catalog  
Number  
Device Marking  
Pin  
Type  
Configuration  
See page 3  
SOT-23  
1
2
A
Single  
Dual  
Dual  
Dual  
BAT54  
KL1  
KL2  
KL3  
KL4  
L4  
Figure  
1
D
BAT54A  
BAT54C  
BAT54S  
L42  
L43  
L44  
Figure 2  
Figure 3  
Figure 4  
B
C
F
E
Maximum Ratings  
Continuos Reverse Voltage  
Forward ContinuousCurrent  
VR  
IF  
30V  
200mA  
H
G
J
Non-Repetitive Peak Forward Current t<1s  
Total Power Dissipation @ TA = 25°C  
Storage Temperature Range  
IFSM  
PD  
0.6A  
200mW  
K
Tstg  
Tj  
-55°C to 150°C  
-55°C to 125°C  
DIMENSIONS  
MM  
Operating Junction Temperature Range  
INCHES  
MIN  
Soldering temperature during 10s  
Tj  
260°C  
DIM  
A
MAX  
.120  
.104  
.055  
.041  
.081  
.024  
.0039  
.044  
.007  
.020  
MIN  
2.80  
2.10  
1.20  
.89  
MAX  
3.04  
2.64  
1.40  
1.03  
2.05  
.60  
NOTE  
.110  
.083  
.047  
.035  
.070  
.018  
.0005  
.035  
.003  
.015  
B
C
D
E
Electrical Characteristics @ 25 °C Unless Otherwise Specified  
1.78  
.45  
F
Characteristics  
Forward Voltage at  
IF = 0.1mA  
IF = 1mA  
IF = 10mA  
IF = 30mA  
IF = 100mA  
Reverse Current  
Symbol  
Max.  
Notes  
G
H
J
.013  
.89  
.100  
1.12  
.180  
.51  
.085  
.37  
240mV  
320mV  
400mV  
500mV  
1000mV  
2.0 uA  
K
VF  
Suggested Solder  
Pad Layout  
.031  
.800  
IR  
VR = 25V  
.035  
.900  
.079  
2.000  
ches  
in  
mm  
Capacitance  
CJ  
trr  
10pF  
5nS  
Measured at  
1.0MHz, VR=1.0V  
IF=IR=10mA;  
I(REC) = 1mA  
Reverse Recovery  
Time  
.037  
.950  
Thermal Resistance,  
Junction to Ambient  
RθJA  
500  
°C/W  
.037  
.950  
www.mccsemi.com  
1 of 3  
Revision: B  
2013/01/01  

BAT54S-TP 替代型号

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