Datasheet > BAT54S-MR

BAT54S-MR

更新时间： 2024-11-27 23:34:31

品牌	Logo	应用领域
其他 - ETC		二极管过程控制系统 PCS
页数	文件大小	规格书
5页	47K
描述
DIODE BAT54S MINIREEL 500PCS

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中文翻译

获取价格

数据手册

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BAT54S-MR 数据手册

DISCRETE POWER AND SIGNAL

TECHNOLOGIES

BAT54/A/C/S

CONNECTION DIAGRAMS

PACKAGE

BAT54

BAT54A

L4P

SOT-23

TO-236AB (Low)

2 NC

BAT54C

BAT54S

MARKING

BAT54 L4P BAT54C L43

BAT54A L42 BAT54S L44

Schottky Barrier Diode

Sourced from Process KA

Absolute Maximum Ratings* TA = 25^OC unless otherwise noted

Sym

Parameter

Value

Units

T_stg

T_J

W_iv

I_F

Storage Temperature

-55 to +150

+150

^OC

Operating Junction Temperature

Working Inverse Voltage

DC Forward Current (IF)

200

^OK/W

i_f

Recurrent Peak Forward Current (IFRM)

300

i_F(surge)Peak Forward Surge Current (IFSM) Pulse Width = 1.0 Second

600

P_D

Total Power Dissipation at 25^OC

230

Theta (Rth j-a) (Note 1)

430

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired

NOTES:

1) From junction to ambient mounted on a ceramic substrate of 10 mm x 8 mm x 0.6 mm

Electrical Characteristics

TA = 25^OC unless otherwise noted

SYM

B_V

CHARACTERISTICS

MIN

MAX

UNITS

TEST CONDITIONS

Breakdown Voltage

Reverse Leakage

Forward Voltage

I_R

10 uA

25 V

I_R

2.0

V_R

V_F

240

320

400

500

1.0

I_F= 100 uA

I_F

1.0 mA

10 mA

30 mA

I_F= 100 mA

C_T

Capacitance

V_R

1.0 V

1.0 MHz

T_RRReverse Recovery Time

5.0

I_F= I_R= 10 mA

I_RR1.0 mA

R_L= 100 Ohms

12 3 4 5

中文翻译

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