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BAT54DW_1

更新时间： 2024-11-28 04:50:27
品牌 Logo 应用领域
美台 - DIODES 肖特基二极管
页数 文件大小 规格书
3页 357K
描述
DUAL SURFACE MOUNT SCHOTTKY BARRIER DIODE

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BAT54DW_1 数据手册

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SPICE MODEL: BAT54DW  
BAT54DW  
DUAL SURFACE MOUNT SCHOTTKY BARRIER DIODE  
Lead-free  
Features  
·
·
·
·
Low Forward Voltage Drop  
A
SOT-363  
Fast Switching  
Dim  
A
Min  
0.10  
1.15  
2.00  
Max  
0.30  
1.35  
2.20  
Ultra-Small Surface Mount Package  
PN Junction Guard Ring for Transient and  
ESD Protection  
B
C
TOP VIEW  
B
C
·
Lead Free/RoHS Compliant (Note 3)  
G
H
D
0.65 Nominal  
Mechanical Data  
F
0.30  
1.80  
¾
0.40  
2.20  
0.10  
1.00  
0.40  
0.25  
8°  
K
·
Case: SOT-363  
M
H
·
Case Material: Molded Plastic. UL Flammability  
Classification Rating 94V-0  
J
J
L
D
F
K
0.90  
0.25  
0.10  
0°  
·
·
·
Moisture Sensitivity: Level 1 per J-STD-020C  
C1  
NC  
A2  
L
Terminals: Solderable per MIL-STD-202, Method 208  
M
Lead Free Plating (Matte Tin Finish annealed over Alloy 42  
leadframe).  
a
·
·
·
Terminal Connections: See Diagram  
Marking: KLD (See Page 2)  
A1  
NC  
C2  
All Dimensions in mm  
Weight: 0.006 grams (approximate)  
@ TA = 25°C unless otherwise specified  
Maximum Ratings  
Characteristic  
Symbol  
Value  
Unit  
VRRM  
VRWM  
VR  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
30  
V
IO  
IF  
Average Rectified Forward Current  
Forward Continuous Current (Note 1)  
Repetitive Peak Forward Current (Note 1)  
Forward Surge Current (Note 1)  
Power Dissipation (Note 1)  
100  
200  
mA  
mA  
IFRM  
IFSM  
Pd  
300  
mA  
600  
mA  
@ t < 1.0s  
200  
mW  
°C/W  
°C  
R
qJA  
Thermal Resistance, Junction to Ambient Air (Note 1)  
Operating and Storage Temperature Range  
625  
Tj, TSTG  
-65 to +125  
@ TA = 25°C unless otherwise specified  
Electrical Characteristics  
Characteristic  
Symbol Min  
Typ  
Max  
Unit  
Test Condition  
V(BR)R  
30  
Reverse Breakdown Voltage (Note 2)  
IRS = 100mA  
¾
¾
V
IF = 0.1mA  
240  
320  
400  
500  
IF = 1mA  
IF = 10mA  
IF = 30mA  
IF = 100mA  
mV  
Forward Voltage  
¾
¾
VF  
1000  
VR = 25V  
IR  
Reverse Leakage Current (Note 2)  
Total Capacitance  
¾
¾
¾
2.0  
mA  
VR = 1.0V, f = 1.0MHz  
CT  
¾
10  
pF  
IF = 10mA through IR = 10mA  
to IR = 1.0mA, RL = 100W  
trr  
Reverse Recovery Time  
¾
¾
5.0  
ns  
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout  
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.  
2. Short duration test pulse used to minimize self-heating effect.  
3. No purposefully added lead.  
DS30107 Rev. 8 - 2  
1 of 3  
BAT54DW  
www.diodes.com  
ã Diodes Incorporated  
123

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