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BAT54DW-13 PDF预览

BAT54DW-13

更新时间: 2024-11-28 14:37:39
品牌 Logo 应用领域
美台 - DIODES 开关光电二极管
页数 文件大小 规格书
2页 78K
描述
Rectifier Diode, Schottky, 2 Element, 0.1A, 30V V(RRM), Silicon, ULTRA SMALL, PLASTIC PACKAGE-6

BAT54DW-13 技术参数

是否无铅:含铅是否Rohs认证:不符合
生命周期:Obsolete包装说明:R-PDSO-G6
针数:6Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.70
风险等级:5.23Is Samacsys:N
其他特性:FAST SWITCHING配置:SEPARATE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:R-PDSO-G6JESD-609代码:e0
湿度敏感等级:1元件数量:2
端子数量:6最高工作温度:125 °C
最低工作温度:-65 °C最大输出电流:0.1 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):235
最大功率耗散:0.2 W认证状态:Not Qualified
最大重复峰值反向电压:30 V最大反向恢复时间:0.005 µs
表面贴装:YES技术:SCHOTTKY
端子面层:Tin/Lead (Sn85Pb15)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:10
Base Number Matches:1

BAT54DW-13 数据手册

 浏览型号BAT54DW-13的Datasheet PDF文件第2页 
SPICE MODEL: BAT54DW  
BAT54DW  
DUAL SURFACE MOUNT SCHOTTKY BARRIER DIODE  
Features  
·
·
·
·
Low Forward Voltage Drop  
A
SOT-363  
Fast Switching  
Dim  
A
Min  
0.10  
1.15  
2.00  
Max  
0.30  
1.35  
2.20  
Ultra-Small Surface Mount Package  
PN Junction Guard Ring for Transient and  
ESD Protection  
B
C
TOP VIEW  
B
C
·
Available in Lead Free/RoHS Compliant Version (Note 3)  
G
H
D
0.65 Nominal  
Mechanical Data  
F
0.30  
1.80  
¾
0.40  
2.20  
0.10  
1.00  
0.40  
0.25  
8°  
K
J
·
·
Case: SOT-363  
M
H
Case Material: Molded Plastic. UL Flammability  
Classification Rating 94V-0  
J
L
D
F
K
0.90  
0.25  
0.10  
0°  
·
·
·
Moisture Sensitivity: Level 1 per J-STD-020C  
C1  
NC  
A2  
L
Terminals: Solderable per MIL-STD-202, Method 208  
M
Also Available in Lead Free Plating (Matte Tin Finish  
annealed over Alloy 42 leadframe). Please See  
Ordering Information, Note 5, on Page 2  
a
A1  
NC  
C2  
All Dimensions in mm  
·
·
·
Terminal Connections: See Diagram  
Marking: KLD (See Page 2)  
Weight: 0.006 grams (approx.)  
@ TA = 25°C unless otherwise specified  
Maximum Ratings  
Characteristic  
Symbol  
Value  
Unit  
VRRM  
VRWM  
VR  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
30  
V
IO  
IF  
Average Rectified Forward Current  
Forward Continuous Current (Note 1)  
Repetitive Peak Forward Current (Note 1)  
Forward Surge Current (Note 1)  
Power Dissipation (Note 1)  
100  
200  
mA  
mA  
IFRM  
IFSM  
Pd  
300  
mA  
600  
mA  
@ t < 1.0s  
200  
mW  
°C/W  
°C  
RqJA  
Tj, TSTG  
Thermal Resistance, Junction to Ambient Air (Note 1)  
Operating and Storage Temperature Range  
625  
-65 to +125  
@ TA = 25°C unless otherwise specified  
Electrical Characteristics  
Characteristic  
Symbol Min  
Typ  
Max  
Unit  
Test Condition  
V(BR)R  
30  
Reverse Breakdown Voltage (Note 2)  
IRS = 100mA  
¾
¾
V
IF = 0.1mA  
240  
320  
400  
500  
IF = 1mA  
IF = 10mA  
IF = 30mA  
IF = 100mA  
mV  
Forward Voltage (Note 2)  
¾
¾
VF  
1000  
VR = 25V  
IR  
Reverse Leakage Current (Note 2)  
Total Capacitance  
¾
¾
¾
2.0  
mA  
VR = 1.0V, f = 1.0MHz  
CT  
¾
10  
pF  
IF = 10mA through IR = 10mA  
to IR = 1.0mA, RL = 100W  
trr  
Reverse Recovery Time  
¾
¾
5.0  
ns  
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout  
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.  
2. Short duration test pulse used to minimize self-heating effect.  
3. No purposefully added lead.  
DS30107 Rev. 6 - 2  
1 of 2  
BAT54DW  
www.diodes.com  
ã Diodes Incorporated  

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