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BAT54DW-T PDF预览

BAT54DW-T

更新时间: 2024-11-28 12:59:27
品牌 Logo 应用领域
美微科 - MCC 肖特基二极管光电二极管
页数 文件大小 规格书
3页 103K
描述
Diode,

BAT54DW-T 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.92JESD-609代码:e0
湿度敏感等级:1端子面层:Tin/Lead (Sn/Pb)
Base Number Matches:1

BAT54DW-T 数据手册

 浏览型号BAT54DW-T的Datasheet PDF文件第2页浏览型号BAT54DW-T的Datasheet PDF文件第3页 
M C C  
BAT54  
THRU  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
21201 Itasca Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
BAT54S  
Features  
·
·
·
Low Forward Voltage  
Surface Mount device  
Very small conduction losses  
250mWatt, 30Volt  
Schottky Barrier Diode  
MCC  
Catalog  
Number  
BAT54  
BAT54A  
BAT54C  
BAT54S  
Device  
Marking  
Pin  
Type  
Configuration  
(See Page 3)  
SOT-23  
L4P  
L42  
L43  
L44  
Single  
Dual  
Dual  
Dual  
Figure 1  
Figure 2  
Figure 3  
Figure 4  
A
D
B
C
F
E
Maximum Ratings  
Continuos Reverse Voltage  
Forward Current  
VR  
IF  
30V  
0.3A  
H
G
J
Non-Repetitive Peak Forward Current t<1s  
Total Power Dissipation @ TA = 25°C  
Storage Temperature Range  
IFSM  
PD  
1.0mA  
250mW  
K
Tstg  
Tj  
-55°C to 150°C  
150°C  
DIMENSIONS  
MM  
Junction Temperature  
INCHES  
MIN  
Soldering temperature during 10s  
Tj  
260°C  
DIM  
A
B
C
D
E
MAX  
.120  
.098  
.055  
.041  
.081  
.024  
.0039  
.044  
.007  
.020  
MIN  
2.80  
2.10  
1.20  
.89  
1.78  
.45  
.013  
.89  
MAX  
3.04  
2.64  
1.40  
1.03  
2.05  
.60  
.100  
1.12  
.180  
.51  
NOTE  
.110  
.083  
.047  
.035  
.070  
.018  
.0005  
.035  
.003  
.015  
Electrical Characteristics @ 25 °C Unless Otherwise Specified  
F
Ratings  
Forward Voltage at  
IF = 0.1mA  
Symbol  
Max.  
Notes  
G
H
J
.085  
.37  
240mV  
320mV  
400mV  
500mV  
900mV  
2.0 uA  
>30V  
K
IF = 1mA  
IF = 10mA  
IF = 30mA  
IF = 100mA  
VF  
Suggested Solder  
Pad Layout  
.031  
.800  
Reverse Current  
Reverse Breakdown  
Voltage  
IR  
V(BR)  
VR = 25V  
.035  
.900  
.079  
2.000  
inches  
mm  
Capacitance  
CJ  
trr  
10pF  
5nS  
Measured at  
1.0MHz, VR=1.0V  
IF=IR=10mA;  
I(REC) = 1mA  
Reverse Recovery  
Time  
.037  
.950  
Thermal Resistance,  
Junction to Ambient  
RqJA  
500K/W  
.037  
.950  
www.mccsemi.com  

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