Datasheet > BAS70WS

BAS70WS

更新时间： 2024-12-01 14:54:43

品牌	Logo	应用领域
先科 - SWST		肖特基二极管
页数	文件大小	规格书
3页	149K
描述
肖特基二极管

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中文翻译

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数据手册

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BAS70WS 数据手册

BAS70WS

Small Signal Schottky Barrier Diode

PINNING

DESCRIPTION

Cathode

Features

Anode

• Low forward voltage drop

Top View

Simplified outline SOD-323 and symbol

Absolute Maximum Ratings (T_a= 25℃)

Parameter

Symbol

Value

Unit

Repetitive Peak Reverse Voltage

Average Rectified Forward Current

Surge Non-Repetitive Forward Current (tp = 10 ms)

Total Power Dissipation

V_RRM

I_F(AV)

I_FSM

P_tot

T_J

230

℃

Junction Temperature

150

Storage Temperature Range

T_stg

- 65 to + 150

℃

Thermal Characteristics

Parameter

Symbol

R_θJA

Value

550

Unit

Typical Thermal Resistance from Junction to Ambient ¹⁾

¹⁾Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

℃/W

Characteristics at T_a= 25℃

Parameter

Reverse Breakdown Voltage

at I_R= 10 μA

Symbol

V_(BR)R

Min.

Max.

Unit

Forward Voltage

at I_F= 1 mA

V_F

I_R

410

100

Reverse Current

at V_R= 50 V

Diode Capacitance

at V_R= 0 V, f = 1 MHz

C_tot

1 / 3

Dated : 03/02/2023 Rev : 03

12 3

中文翻译

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BAS70WS-BL	SWST	获取价格	肖特基二极管
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