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BAS70WT-05 PDF预览

BAS70WT-05

更新时间: 2024-12-01 08:48:31
品牌 Logo 应用领域
美微科 - MCC 整流二极管光电二极管
页数 文件大小 规格书
2页 180K
描述
200mW Schottky Barrier Rectifiers 70 Volts

BAS70WT-05 技术参数

是否Rohs认证: 不符合生命周期:Active
包装说明:ULTRA SMALL, PLASTIC PACKAGE-3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.15Is Samacsys:N
配置:COMMON CATHODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJESD-30 代码:R-PDSO-G3
JESD-609代码:e0元件数量:2
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):240最大功率耗散:0.2 W
认证状态:Not Qualified最大反向恢复时间:0.005 µs
表面贴装:YES技术:SCHOTTKY
端子面层:TIN LEAD端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:30
Base Number Matches:1

BAS70WT-05 数据手册

 浏览型号BAS70WT-05的Datasheet PDF文件第2页 
M C C  
BAS70WT  
THRU  
BAS70WT-06  
TM  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
Micro Commercial Components  
Features  
Low Turn-on Voltage  
Fast Switching  
Ultra-Small Surface Mount Package  
Forward Continuous Current: 70mA @  
Operating Temperature Range Tj: -55 to +125  
200mW Schottky  
Barrier Rectifiers  
70 Volts  
Ta= 25°C  
°C  
°C  
Storage Temperature Range TSTG: -65 to +150  
Mechanical Data  
·
·
Epoxy meets UL 94 V-0 flammability rating  
Moisture Sensitivity Level 1  
SOT-323  
A
D
x
Marking Code:  
BAS70WT=K73  
BAS70WT-04=K74  
BAS70WT-05=K75  
BAS70WT-06=K76  
C
B
F
E
H
G
J
K
BAS70WT-04  
BAS70WT  
DIMENSIONS  
INCHES  
MM  
DIM  
A
B
C
D
E
MIN  
.071  
.045  
.079  
.026 Nominal  
.047  
.012  
.000  
.035  
.004  
.012  
MAX  
.087  
.053  
.087  
MIN  
1.80  
1.15  
2.00  
0.65Nominal  
1.20  
.30  
.000  
.90  
MAX  
2.20  
1.35  
2.20  
NOTE  
.055  
.016  
.004  
.039  
.010  
.016  
1.40  
.40  
.100  
1.00  
.250  
.40  
F
G
H
J
BAS70WT-05  
BAS70WT-06  
.100  
.30  
K
Electrical Characteristics @ 25OC Unless Otherwise Specified  
Suggested Solder  
Pad Layout  
0.70  
Symbol  
Parameter  
Reverse Breakdown Voltage  
(IR=10uAdc)  
Min  
Typ  
Max  
Units  
V(BR)R  
70  
---  
---  
V
Forward Voltage  
IF=1.0mAdc  
IF=15mAdc  
VF  
---  
---  
---  
---  
410  
1000  
mV  
0.90  
Leakage Current  
(VR=50Vdc)  
IR  
---  
---  
---  
---  
100  
2.0  
nA  
pF  
1.90  
Junction Capacitance  
(VR=0, f=1.0MHz)  
Reverse Recovery Time  
(IF=10mA through IR=10mA to  
IR=1.0mA)  
CD  
trr  
---  
---  
5.0  
ns  
0.65  
0.65  
www.mccsemi.com  
1 of 2  
Revision: A  
2011/01/01  

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