Datasheet > BAS70WS-T1-LF

BAS70WS-T1-LF

更新时间： 2024-09-19 20:06:59

品牌	Logo	应用领域
WTE		光电二极管
页数	文件大小	规格书
3页	50K
描述
Rectifier Diode, Schottky, 1 Element, 0.2A, 70V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-2

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数据手册

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BAS70WS-T1-LF 数据手册

WTE

POWER SEMICONDUCTORS

BAS70WS

SURFACE MOUNT SCHOTTKY BARRIER DIODE

Features

ꢀ

Low Turn-on Voltage

ꢀ

Fast Switching

PN Junction Guard Ring for Transient and

ESD Protection

Designed for Surface Mount Application

Plastic Material – UL Recognition Flammability

Classification 94V-O

SOD-323

Dim

Min

2.30

1.60

1.15

0.25

0.09

0.20

0.80

—

Max

2.75

1.80

1.35

0.40

0.18

0.40

1.00

0.12

ꢀ

Mechanical Data

ꢀ

Case: SOD-323, Molded Plastic

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

ꢀ

All Dimensions in mm

ꢀ

Polarity: Cathode Band

Weight: 0.004 grams (approx.)

Marking: Device Code, See Page 2

Lead Free: For RoHS / Lead Free Version,

Add “-LF” Suffix to Part Number, See Page 3

Maximum Ratings @T_A=25°C unless otherwise specified

Characteristic

Symbol

BAS70WS

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

VRRM

V^RWM

V^R

Forward Continuous Current (Note 1)

IFSM

200

600

Forward Surge Current

@ t < 1.0s

Power Dissipation (Note 1)

200

°C/W

°C

Typical Thermal Resistance, Junction to Ambient Air (Note 1)

Operating and Storage Temperature Range

RθJA

Tj, TSTG

625

-55 to +125

Electrical Characteristics @T_A=25°C unless otherwise specified

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

Reverse Breakdown Voltage

V(BR)R

—

@ IR = 10µA

410

750

1000

@ I^F= 1.0mA, t < 300µs

@ I^F= 10mA, t < 300µs

@ I^F= 15mA, t < 300µs

Forward Voltage

—

Reverse Leakage Current

Junction Capacitance

—

100

2.0

@ V_R= 50V, t < 300µs

V_R= 0V, f = 1.0MHz

1.5

I^F= 10mA through IR = 10mA to

IR = 1.0mA, RL = 100Ω

Reverse Recovery Time

trr

—

5.0

Note: 1. Device on fiberglass substrate.

BAS70WS

1 of 3

12 3

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