BAS70WS

更新时间： 2024-11-30 04:34:19

品牌	Logo	应用领域
WTE		整流二极管肖特基二极管
页数	文件大小	规格书
3页	36K
描述
SURFACE MOUNT SCHOTTKY BARRIER DIODE

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中文翻译

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数据手册

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BAS70WS 数据手册

WTE

POWER SEMICONDUCTORS

BAS70WS

SURFACE MOUNT SCHOTTKY BARRIER DIODE

Features

Low Turn-on Voltage

Fast Switching

PN Junction Guard Ring for Transient and

ESD Protection

Designed for Surface Mount Application

Plastic Material – UL Recognition Flammability

Classification 94V-O

SOD-323

Min

Dim

Max

2.70

1.95

1.35

0.35

0.15

0.95

—

2.30

1.75

1.15

ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ

0.25

0.05

Mechanical Data

0.70

0.30

Case: SOD-323, Molded Plastic

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

All Dimensions in mm

Polarity: Cathode Band

Weight: 0.004 grams (approx.)

Marking: A70

Lead Free: For RoHS / Lead Free Version,

Add “-LF” Suffix to Part Number, See Page 3

Maximum Ratings ^@T_A^{=25°C unless otherwise specified}

Characteristic

Symbol

BAS70WS

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V^RRM

V^RWM

V^R

Forward Continuous Current (Note 1)

I^F

I^FSM

200

600

Forward Surge Current

@ t < 1.0s

Power Dissipation (Note 1)

P^d

200

°C/W

°C

Typical Thermal Resistance, Junction to Ambient Air (Note 1)

Operating and Storage Temperature Range

R^ꢀ^JA

T^j, T^STG

625

-55 to +125

Electrical Characteristics ^@T_A^{=25°C unless otherwise specified}

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

Reverse Breakdown Voltage

V^(BR)R

—

@ I^R= 10µA

410

750

1000

@ I^F= 1.0mA, t < 300µs

@ I^F= 10mA, t < 300µs

@ I^F= 15mA, t < 300µs

Forward Voltage

V^F

—

Reverse Leakage Current

Junction Capacitance

I^R

C^j

—

100

@ V_R= 50V, t < 300µs

V_R= 0V, f = 1.0MHz

1.5

2.0

5.0

I^F= 10mA through I^R= 10mA to

I^R= 1.0mA, R^L= 100ꢀ

Reverse Recovery Time

t^rr

—

Note: 1. Device on fiberglass substrate.

BAS70WS

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