Datasheet > BAS70

BAS70

更新时间： 2024-11-21 06:41:27

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描述
Schottky barrier (double) diodes

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数据手册

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BAS70 数据手册

SMD Type

Diodes

Schottky barrier (double) diodes

BAS70 series

SOT-23

Unit: mm

+0.1

-0.1

2.9

0.4

+0.1

-0.1

Features

Low forward current

High breakdown voltage

Guard ring protected

Small plastic SMD package

Low diode capacitance.

+0.1

0.95

-0.1

+0.05

0.1

-0.01

+0.1

-0.1

1.9

1.Base

2.Emitter

3.collector

Absolute Maximum Ratings Ta = 25

Parameter

Continuous reverse voltage

Continuous forward current

Repetitive peak forward current

Non-repetitive peak forward current

Storage temperature

Symbol

V^R

Conditions

Min

Max

Unit

I^F

I^FRM

I^FSM

T^stg

1 s; ä

0.5

tp < 10 ms

100

+150

150

+150

500

-65

Junction temperature

Operating ambient temperature

thermal resistance from junction to ambient

Tamb

Rth j-a

K/W

Electrical Characteristics Ta = 25

Parameter

Symbol

V^F

Conditions

I^F= 1 mA

IF = 10 mA

I^F= 15 mA

Max

410

750

Unit

Forward voltage

V^R= 50 V; note 1

VR = 70 V; note 1

IF = 5 mA

100

Reverse voltage leakage current

Charge carrier life time (Krakauer method)

100

Diode capacitance

Note

C^d

f = 1 MHz; VR = 0;

1. Pulse test: t^p= 300

s; ä = 0.02

Marking

Type

BAS70

73*

BAS70-04

74*

BAS70-05

75*

BAS70-06

76*

BAS70-07

77p

Marking

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BAS70/04/05/06	ETC	获取价格	Schottky barrier diodes
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